JPS5715474A - Solar energy converter - Google Patents

Solar energy converter

Info

Publication number
JPS5715474A
JPS5715474A JP5306381A JP5306381A JPS5715474A JP S5715474 A JPS5715474 A JP S5715474A JP 5306381 A JP5306381 A JP 5306381A JP 5306381 A JP5306381 A JP 5306381A JP S5715474 A JPS5715474 A JP S5715474A
Authority
JP
Japan
Prior art keywords
solar energy
energy converter
converter
solar
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5306381A
Other languages
English (en)
Other versions
JPS6148799B2 (ja
Inventor
Aibuan Chiyaperu Terii
Makufuaasun Utsudooru Jierii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5715474A publication Critical patent/JPS5715474A/ja
Publication of JPS6148799B2 publication Critical patent/JPS6148799B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
JP5306381A 1980-06-23 1981-04-10 Solar energy converter Granted JPS5715474A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/161,820 US4295002A (en) 1980-06-23 1980-06-23 Heterojunction V-groove multijunction solar cell

Publications (2)

Publication Number Publication Date
JPS5715474A true JPS5715474A (en) 1982-01-26
JPS6148799B2 JPS6148799B2 (ja) 1986-10-25

Family

ID=22582886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5306381A Granted JPS5715474A (en) 1980-06-23 1981-04-10 Solar energy converter

Country Status (4)

Country Link
US (1) US4295002A (ja)
EP (1) EP0044396B1 (ja)
JP (1) JPS5715474A (ja)
DE (1) DE3177028D1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05343712A (ja) * 1992-06-05 1993-12-24 Hitachi Ltd タンデムヘテロ光電変換素子の製造方法
JP2008083641A (ja) * 2006-09-29 2008-04-10 Furukawa Electric Co Ltd:The 線状集光レンズとこれを用いた太陽電池素子及び太陽電池モジュール
JP2013026285A (ja) * 2011-07-15 2013-02-04 Fujitsu Ltd 赤外線検知器及び赤外線検知器の製造方法
JP2014183066A (ja) * 2013-03-18 2014-09-29 Nippon Telegr & Teleph Corp <Ntt> 太陽電池

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US4295002A (en) * 1980-06-23 1981-10-13 International Business Machines Corporation Heterojunction V-groove multijunction solar cell
JPS57147284A (en) * 1981-03-06 1982-09-11 Fujitsu Ltd Semiconductor device
US4356341A (en) * 1981-03-13 1982-10-26 Varian Associates, Inc. Cascade solar cell having conductive interconnects
US4360701A (en) * 1981-05-15 1982-11-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Heat transparent high intensity high efficiency solar cell
US4477721A (en) * 1982-01-22 1984-10-16 International Business Machines Corporation Electro-optic signal conversion
US4461922A (en) * 1983-02-14 1984-07-24 Atlantic Richfield Company Solar cell module
US4582952A (en) * 1984-04-30 1986-04-15 Astrosystems, Inc. Gallium arsenide phosphide top solar cell
WO1986002493A1 (en) * 1984-10-16 1986-04-24 Todorof William J Multi-layer thin film, flexible silicon alloy photovoltaic cell
JPS61255074A (ja) * 1985-05-08 1986-11-12 Mitsubishi Electric Corp 光電変換半導体装置
US4638111A (en) * 1985-06-04 1987-01-20 Atlantic Richfield Company Thin film solar cell module
US4633030A (en) * 1985-08-05 1986-12-30 Holobeam, Inc. Photovoltaic cells on lattice-mismatched crystal substrates
US4631352A (en) * 1985-12-17 1986-12-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells
JPS62137097U (ja) * 1986-02-20 1987-08-28
JPS62221167A (ja) * 1986-03-24 1987-09-29 Seiji Wakamatsu 多層型薄膜太陽電池
JPS62251807A (ja) * 1986-04-23 1987-11-02 Tenshiyou Denki Kogyo Kk 学習用コンピユ−タロボツトシステム
US4849028A (en) * 1986-07-03 1989-07-18 Hughes Aircraft Company Solar cell with integrated interconnect device and process for fabrication thereof
US4854975A (en) * 1986-07-03 1989-08-08 Hughes Aircraft Company Solar cell with integrated interconnect device and process for fabrication thereof
GB8627886D0 (en) * 1986-11-21 1987-04-15 Marconi Co Ltd Cadmium mercury telluride photodiode
JPS63164600A (ja) * 1986-12-25 1988-07-07 Sanwa Denshi Kiki Kk 無線操縦システム
US5081049A (en) * 1988-07-18 1992-01-14 Unisearch Limited Sculpted solar cell surfaces
US5019176A (en) * 1990-03-20 1991-05-28 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Thin solar cell and lightweight array
DE69232932T2 (de) * 1991-12-09 2003-08-14 Pacific Solar Pty Ltd Vergrabener kontakt, miteinander verbundene dünnschicht- und grossvolumige photovoltaische zellen
US5261969A (en) * 1992-04-14 1993-11-16 The Boeing Company Monolithic voltage-matched tandem photovoltaic cell and method for making same
US6031179A (en) * 1997-05-09 2000-02-29 Entech, Inc. Color-mixing lens for solar concentrator system and methods of manufacture and operation thereof
US6166320A (en) * 1998-03-19 2000-12-26 Toyota Jidosha Kabushiki Kaisha Tandem solar cell
US6034321A (en) * 1998-03-24 2000-03-07 Essential Research, Inc. Dot-junction photovoltaic cells using high-absorption semiconductors
US6602701B2 (en) * 2000-01-11 2003-08-05 The General Hospital Corporation Three-dimensional cell growth assay
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DE10142481A1 (de) * 2001-08-31 2003-03-27 Rudolf Hezel Solarzelle sowie Verfahren zur Herstellung einer solchen
US6515217B1 (en) 2001-09-11 2003-02-04 Eric Aylaian Solar cell having a three-dimensional array of photovoltaic cells enclosed within an enclosure having reflective surfaces
US7208674B2 (en) * 2001-09-11 2007-04-24 Eric Aylaian Solar cell having photovoltaic cells inclined at acute angle to each other
DE10147887C2 (de) * 2001-09-28 2003-10-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit einem Kontakt, der eine Mehrzahl von voneinander beabstandeten Kontaktstellen umfaßt
US7148417B1 (en) 2003-03-31 2006-12-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration GaP/silicon tandem solar cell with extended temperature range
US20050247339A1 (en) * 2004-05-10 2005-11-10 Imperial College Innovations Limited Method of operating a solar cell
US20060048811A1 (en) * 2004-09-09 2006-03-09 Krut Dimitri D Multijunction laser power converter
GB0519599D0 (en) * 2005-09-26 2005-11-02 Imp College Innovations Ltd Photovoltaic cells
US8314327B2 (en) * 2005-11-06 2012-11-20 Banpil Photonics, Inc. Photovoltaic cells based on nano or micro-scale structures
US8816191B2 (en) * 2005-11-29 2014-08-26 Banpil Photonics, Inc. High efficiency photovoltaic cells and manufacturing thereof
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US8916769B2 (en) 2008-10-01 2014-12-23 International Business Machines Corporation Tandem nanofilm interconnected semiconductor wafer solar cells
US8138410B2 (en) * 2008-10-01 2012-03-20 International Business Machines Corporation Optical tandem photovoltaic cell panels
CN101728440A (zh) * 2008-10-22 2010-06-09 诺华光谱有限公司 太阳能转换器和复合转换器
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US8835748B2 (en) 2009-01-06 2014-09-16 Sunlight Photonics Inc. Multi-junction PV module
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US20150380576A1 (en) 2010-10-13 2015-12-31 Alta Devices, Inc. Optoelectronic device with dielectric layer and method of manufacture
US11271128B2 (en) 2009-10-23 2022-03-08 Utica Leaseco, Llc Multi-junction optoelectronic device
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US11038080B2 (en) 2012-01-19 2021-06-15 Utica Leaseco, Llc Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching
CN102751370B (zh) * 2012-06-20 2014-12-31 常州天合光能有限公司 一种双面异质结太阳电池的制备方法
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CN105742386B (zh) * 2016-02-25 2017-10-17 京东方科技集团股份有限公司 光电二极管及其制作方法、x射线探测基板及其制作方法
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CN109216481A (zh) * 2018-09-05 2019-01-15 苏州钱正科技咨询有限公司 一种p型硅衬底异质结太阳能电池及其制备方法
CN109192797A (zh) * 2018-09-05 2019-01-11 苏州钱正科技咨询有限公司 一种具有v型槽的光伏电池及其制备方法
US20230035481A1 (en) * 2021-07-30 2023-02-02 Blue Origin, Llc Laser system for powering multi-junction photovoltaic cell

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JPS5136086A (ja) * 1974-09-20 1976-03-26 Sharp Kk
US4094704A (en) * 1977-05-11 1978-06-13 Milnes Arthur G Dual electrically insulated solar cells

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JPS5136086A (ja) * 1974-09-20 1976-03-26 Sharp Kk
US4094704A (en) * 1977-05-11 1978-06-13 Milnes Arthur G Dual electrically insulated solar cells

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05343712A (ja) * 1992-06-05 1993-12-24 Hitachi Ltd タンデムヘテロ光電変換素子の製造方法
JP2008083641A (ja) * 2006-09-29 2008-04-10 Furukawa Electric Co Ltd:The 線状集光レンズとこれを用いた太陽電池素子及び太陽電池モジュール
JP2013026285A (ja) * 2011-07-15 2013-02-04 Fujitsu Ltd 赤外線検知器及び赤外線検知器の製造方法
JP2014183066A (ja) * 2013-03-18 2014-09-29 Nippon Telegr & Teleph Corp <Ntt> 太陽電池

Also Published As

Publication number Publication date
EP0044396B1 (en) 1989-04-05
EP0044396A3 (en) 1985-04-17
JPS6148799B2 (ja) 1986-10-25
EP0044396A2 (en) 1982-01-27
US4295002A (en) 1981-10-13
DE3177028D1 (en) 1989-05-11

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