JPS57149725A - Method of epitaxial growth and device therefore - Google Patents

Method of epitaxial growth and device therefore

Info

Publication number
JPS57149725A
JPS57149725A JP3462181A JP3462181A JPS57149725A JP S57149725 A JPS57149725 A JP S57149725A JP 3462181 A JP3462181 A JP 3462181A JP 3462181 A JP3462181 A JP 3462181A JP S57149725 A JPS57149725 A JP S57149725A
Authority
JP
Japan
Prior art keywords
substrate
screen plate
supply
tein
attachment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3462181A
Other languages
Japanese (ja)
Inventor
Takashi Fukui
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3462181A priority Critical patent/JPS57149725A/en
Publication of JPS57149725A publication Critical patent/JPS57149725A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)

Abstract

PURPOSE:To obtain an epitaxial layer of a homogenous and high quality compound semiconductor, by arbitrarily screening the flow of a raw compound onto the surface of a substrate. CONSTITUTION:The surface of the substrate 15 is opened by drawing out the screen plate 21 with a stick 23 crossed with a projection 22, and a susceptor 16 is heated to 500C at high frequency with PH3 of 10cc/min diluted with H2 of 1,000cc/min to be supplied on the substrate. Next the substrate is increased in temperature with a screen plate closed, and H2 of 2,000cc/min containing TEIn (triethyl In) beside PH3 is supplied to the reaction tube 13. After stabilizing the flow rate, the screen plate 21 is opened to supply H2 and PH3 containing TEIn onto the substrate 15 at 600 deg.C for the formation of an epitaxial layer with desired thickness. Thereafter, the screen plate 21 is closed to stop the supply of raw compounds and carriage gas. Thus, the attachment and removal of an intermediate product on and from the surface of the screen plate on starting the supply raw compounds avoid the attachment on the substrate to peovide a homogeneous and high quality InP crystal.
JP3462181A 1981-03-12 1981-03-12 Method of epitaxial growth and device therefore Pending JPS57149725A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3462181A JPS57149725A (en) 1981-03-12 1981-03-12 Method of epitaxial growth and device therefore

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3462181A JPS57149725A (en) 1981-03-12 1981-03-12 Method of epitaxial growth and device therefore

Publications (1)

Publication Number Publication Date
JPS57149725A true JPS57149725A (en) 1982-09-16

Family

ID=12419451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3462181A Pending JPS57149725A (en) 1981-03-12 1981-03-12 Method of epitaxial growth and device therefore

Country Status (1)

Country Link
JP (1) JPS57149725A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4901670A (en) * 1988-08-22 1990-02-20 Santa Barbara Research Center Elemental mercury source for metal-organic chemical vapor deposition

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478083A (en) * 1977-12-05 1979-06-21 Nippon Telegr & Teleph Corp <Ntt> Vapour-phase growth and vapour-phase growth unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478083A (en) * 1977-12-05 1979-06-21 Nippon Telegr & Teleph Corp <Ntt> Vapour-phase growth and vapour-phase growth unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4901670A (en) * 1988-08-22 1990-02-20 Santa Barbara Research Center Elemental mercury source for metal-organic chemical vapor deposition

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