JPS57138186A - Infrared ray detector - Google Patents

Infrared ray detector

Info

Publication number
JPS57138186A
JPS57138186A JP56024448A JP2444881A JPS57138186A JP S57138186 A JPS57138186 A JP S57138186A JP 56024448 A JP56024448 A JP 56024448A JP 2444881 A JP2444881 A JP 2444881A JP S57138186 A JPS57138186 A JP S57138186A
Authority
JP
Japan
Prior art keywords
layer
width
forbidden band
detecting element
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56024448A
Other languages
Japanese (ja)
Inventor
Kunihiro Tanigawa
Hiroshi Takigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56024448A priority Critical patent/JPS57138186A/en
Publication of JPS57138186A publication Critical patent/JPS57138186A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

Abstract

PURPOSE:To unite elements and miniaturize a detector, by forming an infrared detecting element on one of layers with multi-semiconductor piles different in forbidden band-width each other, providing an active circuit element on the other layer having a wider forbidden band-width than a layer where it is formed, and connecting them electrically. CONSTITUTION:A lower growth layer 21 of Hg0.7Cd0.3Te is grown in epitaxial on a large-area, single crystal thin-plate 20 of CdTe, where circuit elements like FETs are formed. Next, a small-area, upper layer 22 of Hg0.8Cd0.2Te is grown in epitaxial on it. An infrared detecting element is provided thereon. The surfaces of layers 21, 22 are covered with insulating films 23, 24 respectively. The forbidden band-width of the layer 21 for circuit element provision is chosen larger than that of the layer 22 for detecting element formation in this fashion. And yet, this provides unity on the same single crystal thin-plate 20. These connections are facilitated and their sizes are reduced.
JP56024448A 1981-02-20 1981-02-20 Infrared ray detector Pending JPS57138186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56024448A JPS57138186A (en) 1981-02-20 1981-02-20 Infrared ray detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56024448A JPS57138186A (en) 1981-02-20 1981-02-20 Infrared ray detector

Publications (1)

Publication Number Publication Date
JPS57138186A true JPS57138186A (en) 1982-08-26

Family

ID=12138429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56024448A Pending JPS57138186A (en) 1981-02-20 1981-02-20 Infrared ray detector

Country Status (1)

Country Link
JP (1) JPS57138186A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5293285A (en) * 1976-02-02 1977-08-05 Hitachi Ltd Structure for semiconductor device
JPS5553416A (en) * 1978-10-11 1980-04-18 Secr Defence Brit Improvement of method of manufacturing semiconductor device
JPS55102280A (en) * 1979-01-30 1980-08-05 Fujitsu Ltd Infrared charge transfer device
JPS5727054A (en) * 1980-06-19 1982-02-13 Rockwell International Corp Selective access array circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5293285A (en) * 1976-02-02 1977-08-05 Hitachi Ltd Structure for semiconductor device
JPS5553416A (en) * 1978-10-11 1980-04-18 Secr Defence Brit Improvement of method of manufacturing semiconductor device
JPS55102280A (en) * 1979-01-30 1980-08-05 Fujitsu Ltd Infrared charge transfer device
JPS5727054A (en) * 1980-06-19 1982-02-13 Rockwell International Corp Selective access array circuit

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