JPS57138176A - Photo ignition thyristor - Google Patents

Photo ignition thyristor

Info

Publication number
JPS57138176A
JPS57138176A JP56023535A JP2353581A JPS57138176A JP S57138176 A JPS57138176 A JP S57138176A JP 56023535 A JP56023535 A JP 56023535A JP 2353581 A JP2353581 A JP 2353581A JP S57138176 A JPS57138176 A JP S57138176A
Authority
JP
Japan
Prior art keywords
layer
emitter
base
short
circuited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56023535A
Other languages
Japanese (ja)
Inventor
Osamu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FUJI DENKI SOUGOU KENKYUSHO KK
Fuji Electric Co Ltd
Original Assignee
FUJI DENKI SOUGOU KENKYUSHO KK
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FUJI DENKI SOUGOU KENKYUSHO KK, Fuji Electric Corporate Research and Development Ltd filed Critical FUJI DENKI SOUGOU KENKYUSHO KK
Priority to JP56023535A priority Critical patent/JPS57138176A/en
Publication of JPS57138176A publication Critical patent/JPS57138176A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To increase the dv/dt withstand voltage of the photo ignition thyristor by a method wherein, on one of the faces of a semiconductor substrate, the base layers is short-circuited to an emitter layer through the intermediary of an electrode, and the maximum width of the first layer, which is interposed between the second layer adjoining the short-circuited section, is designated at 1.5mm. or below. CONSTITUTION:A P type base PB layer 4 is laminated on an N type base layer NB, and an annular N type emitter NE layer 2 is formed by diffusion. Then, a cathode electrode 3 is coated on the whole surface of the layer 4, the base PB layer 4 and the emitter NE layer 3 are short-circuited, a groove entering into the base PB layer 4 is provided in the center part of the emitter NE layer 2 while a plurality of grooves are protruded, and these grooves are used as light receiving section 1. Also, a number of emitter short holes 6, contacting the base PB layer 4 and having the maximum width of 1.5mm. or below, are formed in the emitter NE region 2. Thus, the dv/dt withstand voltage can be improved by merely designating the measurements and shape of the circumference of the light-receiving section.
JP56023535A 1981-02-19 1981-02-19 Photo ignition thyristor Pending JPS57138176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56023535A JPS57138176A (en) 1981-02-19 1981-02-19 Photo ignition thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56023535A JPS57138176A (en) 1981-02-19 1981-02-19 Photo ignition thyristor

Publications (1)

Publication Number Publication Date
JPS57138176A true JPS57138176A (en) 1982-08-26

Family

ID=12113147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56023535A Pending JPS57138176A (en) 1981-02-19 1981-02-19 Photo ignition thyristor

Country Status (1)

Country Link
JP (1) JPS57138176A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134971A (en) * 1979-04-09 1980-10-21 Fuji Electric Co Ltd Photofiring thyristor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134971A (en) * 1979-04-09 1980-10-21 Fuji Electric Co Ltd Photofiring thyristor

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