JPS5713778A - Photoelectric converter - Google Patents
Photoelectric converterInfo
- Publication number
- JPS5713778A JPS5713778A JP5636981A JP5636981A JPS5713778A JP S5713778 A JPS5713778 A JP S5713778A JP 5636981 A JP5636981 A JP 5636981A JP 5636981 A JP5636981 A JP 5636981A JP S5713778 A JPS5713778 A JP S5713778A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric converter
- photoelectric
- converter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the Schottky type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/161,550 US4292461A (en) | 1980-06-20 | 1980-06-20 | Amorphous-crystalline tandem solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5713778A true JPS5713778A (en) | 1982-01-23 |
JPS6155268B2 JPS6155268B2 (ja) | 1986-11-27 |
Family
ID=22581638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5636981A Granted JPS5713778A (en) | 1980-06-20 | 1981-04-16 | Photoelectric converter |
Country Status (4)
Country | Link |
---|---|
US (1) | US4292461A (ja) |
EP (1) | EP0042467B1 (ja) |
JP (1) | JPS5713778A (ja) |
DE (1) | DE3160545D1 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58128778A (ja) * | 1982-01-28 | 1983-08-01 | Seiko Epson Corp | 半導体装置 |
JPS59124772A (ja) * | 1982-12-29 | 1984-07-18 | Yoshihiro Hamakawa | 結晶系半導体とアモルフアス半導体とのヘテロ接合光起電力素子 |
JPS60100485A (ja) * | 1983-10-06 | 1985-06-04 | エクソン リサ−チ アンド エンジニアリング カンパニ− | 半導体装置 |
JPS60101979A (ja) * | 1983-11-07 | 1985-06-06 | Daihen Corp | 光起電力素子 |
JPS627170A (ja) * | 1985-06-04 | 1987-01-14 | シーメンス ソーラー インダストリーズ,エル.ピー. | 透明な光起電力モジユ−ル |
JPS62230064A (ja) * | 1986-03-31 | 1987-10-08 | Semiconductor Energy Lab Co Ltd | 半導体装置作成方法 |
JP2009267433A (ja) * | 2001-12-05 | 2009-11-12 | Semiconductor Energy Lab Co Ltd | 有機太陽電池 |
US11430910B2 (en) | 2016-02-03 | 2022-08-30 | Soitec | Engineered substrate |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4377723A (en) * | 1980-05-02 | 1983-03-22 | The University Of Delaware | High efficiency thin-film multiple-gap photovoltaic device |
JPS5752176A (en) * | 1980-09-16 | 1982-03-27 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
US4387265A (en) * | 1981-07-17 | 1983-06-07 | University Of Delaware | Tandem junction amorphous semiconductor photovoltaic cell |
US4496788A (en) * | 1982-12-29 | 1985-01-29 | Osaka Transformer Co., Ltd. | Photovoltaic device |
US4536607A (en) * | 1984-03-01 | 1985-08-20 | Wiesmann Harold J | Photovoltaic tandem cell |
US4878097A (en) * | 1984-05-15 | 1989-10-31 | Eastman Kodak Company | Semiconductor photoelectric conversion device and method for making same |
US4950614A (en) * | 1984-05-15 | 1990-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a tandem type semiconductor photoelectric conversion device |
EP0177172A3 (en) * | 1984-08-29 | 1988-09-21 | Varian Associates, Inc. | Monolithic semiconductor |
US4881979A (en) * | 1984-08-29 | 1989-11-21 | Varian Associates, Inc. | Junctions for monolithic cascade solar cells and methods |
JPS61104678A (ja) * | 1984-10-29 | 1986-05-22 | Mitsubishi Electric Corp | アモルフアス太陽電池 |
US4923524A (en) * | 1985-05-06 | 1990-05-08 | Chronar Corp. | Wide ranging photovoltaic laminates comprising particulate semiconductors |
CA1299716C (en) * | 1987-11-20 | 1992-04-28 | Katsumi Nakagawa | Pin junction photovoltaic element with p or n-type semiconductor layercomprising non-single crystal material containing zn, se, h in an amount of 1 to 4 atomic % and a dopant and i-type semiconductor layer comprising non-single crystal si(h,f) material |
JPH0193676U (ja) * | 1987-12-15 | 1989-06-20 | ||
US4954851A (en) * | 1988-05-26 | 1990-09-04 | Bell Communications Research Inc. | Schottky barrier on indium gallium arsenide |
US5808233A (en) * | 1996-03-11 | 1998-09-15 | Temple University-Of The Commonwealth System Of Higher Education | Amorphous-crystalline thermocouple and methods of its manufacture |
US6121541A (en) * | 1997-07-28 | 2000-09-19 | Bp Solarex | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
US6587097B1 (en) | 2000-11-28 | 2003-07-01 | 3M Innovative Properties Co. | Display system |
US20080135083A1 (en) * | 2006-12-08 | 2008-06-12 | Higher Way Electronic Co., Ltd. | Cascade solar cell with amorphous silicon-based solar cell |
JP2008235521A (ja) * | 2007-03-20 | 2008-10-02 | Sanyo Electric Co Ltd | 半導体基板の割断方法及び太陽電池の割断方法並びに太陽電池 |
KR101677076B1 (ko) * | 2009-06-05 | 2016-11-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광전 변환 디바이스 및 그 제조 방법 |
US20120211065A1 (en) * | 2011-02-21 | 2012-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
US9818901B2 (en) * | 2011-05-13 | 2017-11-14 | International Business Machines Corporation | Wafer bonded solar cells and fabrication methods |
US10100415B2 (en) * | 2014-03-21 | 2018-10-16 | Hypersolar, Inc. | Multi-junction artificial photosynthetic cell with enhanced photovoltages |
WO2016069758A1 (en) * | 2014-10-29 | 2016-05-06 | Sru Corporation | Tandem photovoltaic device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS519573A (ja) * | 1974-07-13 | 1976-01-26 | Tdk Electronics Co Ltd |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4017332A (en) * | 1975-02-27 | 1977-04-12 | Varian Associates | Solar cells employing stacked opposite conductivity layers |
US4179702A (en) * | 1978-03-09 | 1979-12-18 | Research Triangle Institute | Cascade solar cells |
US4163677A (en) * | 1978-04-28 | 1979-08-07 | Rca Corporation | Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier |
-
1980
- 1980-06-20 US US06/161,550 patent/US4292461A/en not_active Expired - Lifetime
-
1981
- 1981-02-16 DE DE8181101069T patent/DE3160545D1/de not_active Expired
- 1981-02-16 EP EP81101069A patent/EP0042467B1/en not_active Expired
- 1981-04-16 JP JP5636981A patent/JPS5713778A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS519573A (ja) * | 1974-07-13 | 1976-01-26 | Tdk Electronics Co Ltd |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58128778A (ja) * | 1982-01-28 | 1983-08-01 | Seiko Epson Corp | 半導体装置 |
JPS59124772A (ja) * | 1982-12-29 | 1984-07-18 | Yoshihiro Hamakawa | 結晶系半導体とアモルフアス半導体とのヘテロ接合光起電力素子 |
JPS60100485A (ja) * | 1983-10-06 | 1985-06-04 | エクソン リサ−チ アンド エンジニアリング カンパニ− | 半導体装置 |
JPS60101979A (ja) * | 1983-11-07 | 1985-06-06 | Daihen Corp | 光起電力素子 |
JPS627170A (ja) * | 1985-06-04 | 1987-01-14 | シーメンス ソーラー インダストリーズ,エル.ピー. | 透明な光起電力モジユ−ル |
JPS62230064A (ja) * | 1986-03-31 | 1987-10-08 | Semiconductor Energy Lab Co Ltd | 半導体装置作成方法 |
JP2009267433A (ja) * | 2001-12-05 | 2009-11-12 | Semiconductor Energy Lab Co Ltd | 有機太陽電池 |
US11217764B2 (en) | 2001-12-05 | 2022-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Organic semiconductor element |
US11430910B2 (en) | 2016-02-03 | 2022-08-30 | Soitec | Engineered substrate |
Also Published As
Publication number | Publication date |
---|---|
EP0042467A2 (en) | 1981-12-30 |
DE3160545D1 (en) | 1983-08-11 |
EP0042467B1 (en) | 1983-07-06 |
JPS6155268B2 (ja) | 1986-11-27 |
EP0042467A3 (en) | 1982-03-10 |
US4292461A (en) | 1981-09-29 |
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