DE3160545D1 - Tandem solar cell - Google Patents

Tandem solar cell

Info

Publication number
DE3160545D1
DE3160545D1 DE8181101069T DE3160545T DE3160545D1 DE 3160545 D1 DE3160545 D1 DE 3160545D1 DE 8181101069 T DE8181101069 T DE 8181101069T DE 3160545 T DE3160545 T DE 3160545T DE 3160545 D1 DE3160545 D1 DE 3160545D1
Authority
DE
Germany
Prior art keywords
solar cell
tandem solar
tandem
cell
solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181101069T
Other languages
English (en)
Inventor
Harold John Hovel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3160545D1 publication Critical patent/DE3160545D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the Schottky type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
DE8181101069T 1980-06-20 1981-02-16 Tandem solar cell Expired DE3160545D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/161,550 US4292461A (en) 1980-06-20 1980-06-20 Amorphous-crystalline tandem solar cell

Publications (1)

Publication Number Publication Date
DE3160545D1 true DE3160545D1 (en) 1983-08-11

Family

ID=22581638

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181101069T Expired DE3160545D1 (en) 1980-06-20 1981-02-16 Tandem solar cell

Country Status (4)

Country Link
US (1) US4292461A (de)
EP (1) EP0042467B1 (de)
JP (1) JPS5713778A (de)
DE (1) DE3160545D1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4377723A (en) * 1980-05-02 1983-03-22 The University Of Delaware High efficiency thin-film multiple-gap photovoltaic device
JPS5752176A (en) * 1980-09-16 1982-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device
US4387265A (en) * 1981-07-17 1983-06-07 University Of Delaware Tandem junction amorphous semiconductor photovoltaic cell
JPS58128778A (ja) * 1982-01-28 1983-08-01 Seiko Epson Corp 半導体装置
US4496788A (en) * 1982-12-29 1985-01-29 Osaka Transformer Co., Ltd. Photovoltaic device
JPH0644638B2 (ja) * 1982-12-29 1994-06-08 圭弘 濱川 異質単位セル同士のスタック形光起電力素子
US4598164A (en) * 1983-10-06 1986-07-01 Exxon Research And Engineering Co. Solar cell made from amorphous superlattice material
JPS60101979A (ja) * 1983-11-07 1985-06-06 Daihen Corp 光起電力素子
US4536607A (en) * 1984-03-01 1985-08-20 Wiesmann Harold J Photovoltaic tandem cell
US4878097A (en) * 1984-05-15 1989-10-31 Eastman Kodak Company Semiconductor photoelectric conversion device and method for making same
US4950614A (en) * 1984-05-15 1990-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of making a tandem type semiconductor photoelectric conversion device
EP0177172A3 (de) * 1984-08-29 1988-09-21 Varian Associates, Inc. Monolithischer Halbleiter
US4881979A (en) * 1984-08-29 1989-11-21 Varian Associates, Inc. Junctions for monolithic cascade solar cells and methods
JPS61104678A (ja) * 1984-10-29 1986-05-22 Mitsubishi Electric Corp アモルフアス太陽電池
US4923524A (en) * 1985-05-06 1990-05-08 Chronar Corp. Wide ranging photovoltaic laminates comprising particulate semiconductors
US4663495A (en) * 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
JPS62230064A (ja) * 1986-03-31 1987-10-08 Semiconductor Energy Lab Co Ltd 半導体装置作成方法
CA1299716C (en) * 1987-11-20 1992-04-28 Katsumi Nakagawa Pin junction photovoltaic element with p or n-type semiconductor layercomprising non-single crystal material containing zn, se, h in an amount of 1 to 4 atomic % and a dopant and i-type semiconductor layer comprising non-single crystal si(h,f) material
JPH0193676U (de) * 1987-12-15 1989-06-20
US4954851A (en) * 1988-05-26 1990-09-04 Bell Communications Research Inc. Schottky barrier on indium gallium arsenide
US5808233A (en) * 1996-03-11 1998-09-15 Temple University-Of The Commonwealth System Of Higher Education Amorphous-crystalline thermocouple and methods of its manufacture
US6121541A (en) * 1997-07-28 2000-09-19 Bp Solarex Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US6587097B1 (en) 2000-11-28 2003-07-01 3M Innovative Properties Co. Display system
US7956349B2 (en) * 2001-12-05 2011-06-07 Semiconductor Energy Laboratory Co., Ltd. Organic semiconductor element
US20080135083A1 (en) * 2006-12-08 2008-06-12 Higher Way Electronic Co., Ltd. Cascade solar cell with amorphous silicon-based solar cell
JP2008235521A (ja) * 2007-03-20 2008-10-02 Sanyo Electric Co Ltd 半導体基板の割断方法及び太陽電池の割断方法並びに太陽電池
KR101677076B1 (ko) * 2009-06-05 2016-11-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 디바이스 및 그 제조 방법
US20120211065A1 (en) * 2011-02-21 2012-08-23 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US9818901B2 (en) * 2011-05-13 2017-11-14 International Business Machines Corporation Wafer bonded solar cells and fabrication methods
US10100415B2 (en) * 2014-03-21 2018-10-16 Hypersolar, Inc. Multi-junction artificial photosynthetic cell with enhanced photovoltages
WO2016069758A1 (en) * 2014-10-29 2016-05-06 Sru Corporation Tandem photovoltaic device
FR3047351B1 (fr) 2016-02-03 2023-07-14 Soitec Silicon On Insulator Substrat avance

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5312797B2 (de) * 1974-07-13 1978-05-04
US4017332A (en) * 1975-02-27 1977-04-12 Varian Associates Solar cells employing stacked opposite conductivity layers
US4179702A (en) * 1978-03-09 1979-12-18 Research Triangle Institute Cascade solar cells
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

Also Published As

Publication number Publication date
JPS5713778A (en) 1982-01-23
EP0042467A2 (de) 1981-12-30
EP0042467B1 (de) 1983-07-06
JPS6155268B2 (de) 1986-11-27
EP0042467A3 (en) 1982-03-10
US4292461A (en) 1981-09-29

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee