JPS57136375A - Normal off type field effect transistor - Google Patents

Normal off type field effect transistor

Info

Publication number
JPS57136375A
JPS57136375A JP55582A JP55582A JPS57136375A JP S57136375 A JPS57136375 A JP S57136375A JP 55582 A JP55582 A JP 55582A JP 55582 A JP55582 A JP 55582A JP S57136375 A JPS57136375 A JP S57136375A
Authority
JP
Japan
Prior art keywords
normal
field effect
effect transistor
type field
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55582A
Other languages
English (en)
Japanese (ja)
Inventor
Rin Niyuien Toron
Derajiyuboodoufu Danieru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS57136375A publication Critical patent/JPS57136375A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
JP55582A 1981-01-06 1982-01-05 Normal off type field effect transistor Pending JPS57136375A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8100096A FR2497603A1 (fr) 1981-01-06 1981-01-06 Transistor a faible temps de commutation, de type normalement bloquant

Publications (1)

Publication Number Publication Date
JPS57136375A true JPS57136375A (en) 1982-08-23

Family

ID=9253889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55582A Pending JPS57136375A (en) 1981-01-06 1982-01-05 Normal off type field effect transistor

Country Status (3)

Country Link
EP (1) EP0055968A3 (US20030220297A1-20031127-C00009.png)
JP (1) JPS57136375A (US20030220297A1-20031127-C00009.png)
FR (1) FR2497603A1 (US20030220297A1-20031127-C00009.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61161773A (ja) * 1985-01-11 1986-07-22 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
US6792953B2 (en) 2000-09-12 2004-09-21 Filligent Limited Tobacco smoke filter

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4583105A (en) * 1982-12-30 1986-04-15 International Business Machines Corporation Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage
JPS60136380A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd 半導体装置
EP0162541A1 (en) * 1984-03-28 1985-11-27 International Standard Electric Corporation Integrated heterojunction FET and photodiode
EP0160377A1 (en) * 1984-03-28 1985-11-06 International Standard Electric Corporation Heterojunction photo-FET and method of making the same
JPS613465A (ja) * 1984-06-18 1986-01-09 Fujitsu Ltd 半導体装置及びその製造方法
GB2172742B (en) * 1985-03-21 1988-08-24 Stc Plc Photoconductor
JPS6254474A (ja) * 1985-05-20 1987-03-10 Sumitomo Electric Ind Ltd 電界効果トランジスタ
JPH031547A (ja) * 1989-05-29 1991-01-08 Mitsubishi Electric Corp 化合物半導体ｍｉｓ・ｆｅｔおよびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4160261A (en) * 1978-01-13 1979-07-03 Bell Telephone Laboratories, Incorporated Mis heterojunction structures
FR2465317A2 (fr) * 1979-03-28 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
FR2469002A1 (fr) * 1979-10-26 1981-05-08 Thomson Csf Dispositif semiconducteur a effet de champ pour hautes frequences et transistor et dispositif a transfert de charges utilisant un tel semiconducteur
DE3072175D1 (de) * 1979-12-28 1990-04-26 Fujitsu Ltd Halbleitervorrichtungen mit heterouebergang.
FR2489045A1 (fr) * 1980-08-20 1982-02-26 Thomson Csf Transistor a effet de champ gaas a memoire non volatile

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61161773A (ja) * 1985-01-11 1986-07-22 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
US6792953B2 (en) 2000-09-12 2004-09-21 Filligent Limited Tobacco smoke filter

Also Published As

Publication number Publication date
FR2497603A1 (fr) 1982-07-09
FR2497603B1 (US20030220297A1-20031127-C00009.png) 1984-08-10
EP0055968A3 (fr) 1982-08-04
EP0055968A2 (fr) 1982-07-14

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