JPS57135065A - Applying machine - Google Patents

Applying machine

Info

Publication number
JPS57135065A
JPS57135065A JP1811081A JP1811081A JPS57135065A JP S57135065 A JPS57135065 A JP S57135065A JP 1811081 A JP1811081 A JP 1811081A JP 1811081 A JP1811081 A JP 1811081A JP S57135065 A JPS57135065 A JP S57135065A
Authority
JP
Japan
Prior art keywords
foreign matters
detector
mask substrate
applying machine
mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1811081A
Other languages
Japanese (ja)
Inventor
Tetsuro Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1811081A priority Critical patent/JPS57135065A/en
Publication of JPS57135065A publication Critical patent/JPS57135065A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To perform high-speed treatment while inhibiting adherence of foreign matters, by locating a detector, which comprises a laser generator, a laser beam scanning part and a foreign matter-detecting part, to detect the foreign matters adhered to a workpiece at the downstream position of an applying machine.
CONSTITUTION: A mask substrate M, whose surface is coated with a photoresist by an applying machine 2, is passed through a baking oven 4 to a detector 5. At the detector 5, laser beams from a laser generator 7 are irradiated to the whole surface of the mask substrate M by the action of a swinging mirror 9 and a mirror 10. The reflecting light reaches a half mirror 8 along the reversal passage, and is reflected and received by a light receiver 12. In this case, when there are foreign matters on the mask substrate M, regular reflection is hampered and the amount of the reflecting light is reduced. The decrease of the reflected light amount is detected by the light receiver 12, so that the foreign matters can be easily detected.
COPYRIGHT: (C)1982,JPO&Japio
JP1811081A 1981-02-12 1981-02-12 Applying machine Pending JPS57135065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1811081A JPS57135065A (en) 1981-02-12 1981-02-12 Applying machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1811081A JPS57135065A (en) 1981-02-12 1981-02-12 Applying machine

Publications (1)

Publication Number Publication Date
JPS57135065A true JPS57135065A (en) 1982-08-20

Family

ID=11962468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1811081A Pending JPS57135065A (en) 1981-02-12 1981-02-12 Applying machine

Country Status (1)

Country Link
JP (1) JPS57135065A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62263646A (en) * 1986-05-12 1987-11-16 Toshiba Corp Inspecting device for wafer
JPS63261632A (en) * 1987-04-20 1988-10-28 日立電線株式会社 Foreign matter detector for insulation paper for power cable
JP2003077828A (en) * 2001-07-11 2003-03-14 Samsung Electronics Co Ltd System and method for photolithography process

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62263646A (en) * 1986-05-12 1987-11-16 Toshiba Corp Inspecting device for wafer
JPS63261632A (en) * 1987-04-20 1988-10-28 日立電線株式会社 Foreign matter detector for insulation paper for power cable
JPH0576123B2 (en) * 1987-04-20 1993-10-22 Hitachi Cable
JP2003077828A (en) * 2001-07-11 2003-03-14 Samsung Electronics Co Ltd System and method for photolithography process

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