JPS57128334A - Electron beam resist developing method - Google Patents

Electron beam resist developing method

Info

Publication number
JPS57128334A
JPS57128334A JP1317181A JP1317181A JPS57128334A JP S57128334 A JPS57128334 A JP S57128334A JP 1317181 A JP1317181 A JP 1317181A JP 1317181 A JP1317181 A JP 1317181A JP S57128334 A JPS57128334 A JP S57128334A
Authority
JP
Japan
Prior art keywords
electron beam
beam resist
reproductivity
development
pbs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1317181A
Other languages
Japanese (ja)
Other versions
JPH0322620B2 (en
Inventor
Susumu Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP1317181A priority Critical patent/JPS57128334A/en
Publication of JPS57128334A publication Critical patent/JPS57128334A/en
Publication of JPH0322620B2 publication Critical patent/JPH0322620B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To develop an electron beam resist at comparatively low temperatures, with high stability and reproductivity, by using a developing solution containing a specified ketone and when needed, a higher alcohol. CONSTITUTION:A developing solution to be used in the developing process of a PBS electron beam resist contains a ketone represented by the general formula R1COR2, R1 being 3-6C alkyl, R2 being 1-4C alkyl and when needed 0-30wt% >=3C alcohol, such as isopropyl alcohol. A developable temperature is 15-33 deg.C, and severe development conditions need not be set, development stability and reproductivity are satisfactory, so this development process of the PBS electron beam resist is easily practicable. The form of the obtained resist film is also satisfactory, and the film is not rough in the surface, and superior in resolution. In addition, a resist film having a latent image formed with high intensity electron beams can be developed also by this method.
JP1317181A 1981-01-31 1981-01-31 Electron beam resist developing method Granted JPS57128334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1317181A JPS57128334A (en) 1981-01-31 1981-01-31 Electron beam resist developing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1317181A JPS57128334A (en) 1981-01-31 1981-01-31 Electron beam resist developing method

Publications (2)

Publication Number Publication Date
JPS57128334A true JPS57128334A (en) 1982-08-09
JPH0322620B2 JPH0322620B2 (en) 1991-03-27

Family

ID=11825727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1317181A Granted JPS57128334A (en) 1981-01-31 1981-01-31 Electron beam resist developing method

Country Status (1)

Country Link
JP (1) JPS57128334A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS512375A (en) * 1974-05-22 1976-01-09 Bud Hans
JPS5143127A (en) * 1974-09-26 1976-04-13 Ibm
JPS5143781A (en) * 1974-10-09 1976-04-14 Asahi Chemical Ind Arufua amino 33 shikurohekiseniruarukiren penishirinrui oyobi sefuarosuhorinruino seiho

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS512375A (en) * 1974-05-22 1976-01-09 Bud Hans
JPS5143127A (en) * 1974-09-26 1976-04-13 Ibm
JPS5143781A (en) * 1974-10-09 1976-04-14 Asahi Chemical Ind Arufua amino 33 shikurohekiseniruarukiren penishirinrui oyobi sefuarosuhorinruino seiho

Also Published As

Publication number Publication date
JPH0322620B2 (en) 1991-03-27

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