JPS57126971A - Method for precisely processing metal wafer - Google Patents

Method for precisely processing metal wafer

Info

Publication number
JPS57126971A
JPS57126971A JP1084481A JP1084481A JPS57126971A JP S57126971 A JPS57126971 A JP S57126971A JP 1084481 A JP1084481 A JP 1084481A JP 1084481 A JP1084481 A JP 1084481A JP S57126971 A JPS57126971 A JP S57126971A
Authority
JP
Japan
Prior art keywords
metal wafer
toner
pattern
solvent
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1084481A
Other languages
Japanese (ja)
Inventor
Susumu Hosaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP1084481A priority Critical patent/JPS57126971A/en
Publication of JPS57126971A publication Critical patent/JPS57126971A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To simplify a preparation process and reduce a preparation cost to a large extent by forming a mask pattern by using electrostatic printing technique.
CONSTITUTION: A metal wafer 1 of which the back surface is coated with a layer withstanding an etching liquid is prepared and a pattern image is projected onto a charged photoconductive plate 6 such as a ZnO plate or the like to form an electrostatic latent image and a positive image of said pattern is obtained by developing said latent image with a toner 7. After this treatment, the toner 7 of said positive image is transferred to the surface of the metal wafer 1 to be fixed with a solvent or a solvent vapor and the exposed metal wafer 1 not masked with the toner 7 is removed by etching technique. Finally, when the mask coating layer 2 of the toner 7 is chemically peeled by mechanical brushing or by using a solvent, the metal wafer 1 with a desired pattern is obtained.
COPYRIGHT: (C)1982,JPO&Japio
JP1084481A 1981-01-29 1981-01-29 Method for precisely processing metal wafer Pending JPS57126971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1084481A JPS57126971A (en) 1981-01-29 1981-01-29 Method for precisely processing metal wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1084481A JPS57126971A (en) 1981-01-29 1981-01-29 Method for precisely processing metal wafer

Publications (1)

Publication Number Publication Date
JPS57126971A true JPS57126971A (en) 1982-08-06

Family

ID=11761653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1084481A Pending JPS57126971A (en) 1981-01-29 1981-01-29 Method for precisely processing metal wafer

Country Status (1)

Country Link
JP (1) JPS57126971A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755257A (en) * 1986-04-17 1988-07-05 Dainippon Screen Mfg. Co., Ltd. Method of processing thin metal sheets by photoetching
CN100430810C (en) * 2002-04-24 2008-11-05 希毕克斯影像有限公司 Process for forming a patterned thin film conductive structure on a substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755257A (en) * 1986-04-17 1988-07-05 Dainippon Screen Mfg. Co., Ltd. Method of processing thin metal sheets by photoetching
CN100430810C (en) * 2002-04-24 2008-11-05 希毕克斯影像有限公司 Process for forming a patterned thin film conductive structure on a substrate

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