JPS571257A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS571257A
JPS571257A JP7429680A JP7429680A JPS571257A JP S571257 A JPS571257 A JP S571257A JP 7429680 A JP7429680 A JP 7429680A JP 7429680 A JP7429680 A JP 7429680A JP S571257 A JPS571257 A JP S571257A
Authority
JP
Japan
Prior art keywords
layer
layers
directly under
current
breadth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7429680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6364060B2 (enrdf_load_stackoverflow
Inventor
Yoshiteru Shimizu
Yoshio Terasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7429680A priority Critical patent/JPS571257A/ja
Publication of JPS571257A publication Critical patent/JPS571257A/ja
Publication of JPS6364060B2 publication Critical patent/JPS6364060B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Thyristors (AREA)
JP7429680A 1980-06-04 1980-06-04 Semiconductor device Granted JPS571257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7429680A JPS571257A (en) 1980-06-04 1980-06-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7429680A JPS571257A (en) 1980-06-04 1980-06-04 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS571257A true JPS571257A (en) 1982-01-06
JPS6364060B2 JPS6364060B2 (enrdf_load_stackoverflow) 1988-12-09

Family

ID=13543026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7429680A Granted JPS571257A (en) 1980-06-04 1980-06-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS571257A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022369A (ja) * 1983-07-18 1985-02-04 Mitsubishi Electric Corp 自己消弧形制御整流半導体装置
JPS62147770A (ja) * 1985-12-20 1987-07-01 Fuji Electric Co Ltd Ｇｔｏサイリスタ
US4918509A (en) * 1986-04-12 1990-04-17 Licentia Patent-Verwaltungs-Gmbh Gate turn-off thyristor
US5148254A (en) * 1988-10-04 1992-09-15 Kabushiki Kaisha Toshiba Finely controlled semiconductor device
US5248622A (en) * 1988-10-04 1993-09-28 Kabushiki Kashiba Toshiba Finely controlled semiconductor device and method of manufacturing the same
EP0592992A1 (de) * 1992-10-15 1994-04-20 Siemens Aktiengesellschaft Abschaltbarer Thyristor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022369A (ja) * 1983-07-18 1985-02-04 Mitsubishi Electric Corp 自己消弧形制御整流半導体装置
JPS62147770A (ja) * 1985-12-20 1987-07-01 Fuji Electric Co Ltd Ｇｔｏサイリスタ
US4918509A (en) * 1986-04-12 1990-04-17 Licentia Patent-Verwaltungs-Gmbh Gate turn-off thyristor
US5148254A (en) * 1988-10-04 1992-09-15 Kabushiki Kaisha Toshiba Finely controlled semiconductor device
US5248622A (en) * 1988-10-04 1993-09-28 Kabushiki Kashiba Toshiba Finely controlled semiconductor device and method of manufacturing the same
EP0592992A1 (de) * 1992-10-15 1994-04-20 Siemens Aktiengesellschaft Abschaltbarer Thyristor

Also Published As

Publication number Publication date
JPS6364060B2 (enrdf_load_stackoverflow) 1988-12-09

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