JPS57124464A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS57124464A JPS57124464A JP1098181A JP1098181A JPS57124464A JP S57124464 A JPS57124464 A JP S57124464A JP 1098181 A JP1098181 A JP 1098181A JP 1098181 A JP1098181 A JP 1098181A JP S57124464 A JPS57124464 A JP S57124464A
- Authority
- JP
- Japan
- Prior art keywords
- resistance layer
- type
- abnormal
- type resistance
- bypassed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Abstract
PURPOSE:To prevent degradation due to abnormal input overvoltage by inserting two protective elements between a base and a signal input terminal. CONSTITUTION:The two protective elements 100, 200 are inserted to an input circuit from the input terminal 6 of an IC. When the abnormal overvoltage having positive polarity is applied to the terminal 6, the voltage is clamped by a reverse direction diode consisting of an N type resistance layer 28 of the protective element 100 and a P type substrate 10 while being dropped by the N type resistance layer 28 and a P type resistance layer 32 of the protective element 200. A diode composed of the P type resistance layer 32 and an N type epitaxial growth layer 15 is forward bypassed at the same time, and bypassed by the junction capacity of the growth layer 15 and the P type substrate 10. When the abnormal voltage having negative polarity is applied to the terminal, the diode consisting of the N type resistance layer 28 and the P type substrate 10 is forward bypassed, and the abnormal overvoltage is not applied to a transistor 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1098181A JPS57124464A (en) | 1981-01-26 | 1981-01-26 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1098181A JPS57124464A (en) | 1981-01-26 | 1981-01-26 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57124464A true JPS57124464A (en) | 1982-08-03 |
Family
ID=11765325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1098181A Pending JPS57124464A (en) | 1981-01-26 | 1981-01-26 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57124464A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6097659A (en) * | 1983-11-01 | 1985-05-31 | Matsushita Electronics Corp | Semiconductor integrated circuit |
US6614282B2 (en) | 2001-10-15 | 2003-09-02 | Denso Corporation | Clamp circuit for a semiconductor integrated circuit device |
US6737905B1 (en) | 2002-02-26 | 2004-05-18 | Denso Corporation | Clamp circuit |
US6794921B2 (en) | 2002-07-11 | 2004-09-21 | Denso Corporation | Clamp circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5565454A (en) * | 1978-11-13 | 1980-05-16 | Nec Corp | Semiconductor device |
-
1981
- 1981-01-26 JP JP1098181A patent/JPS57124464A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5565454A (en) * | 1978-11-13 | 1980-05-16 | Nec Corp | Semiconductor device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6097659A (en) * | 1983-11-01 | 1985-05-31 | Matsushita Electronics Corp | Semiconductor integrated circuit |
JPH058582B2 (en) * | 1983-11-01 | 1993-02-02 | Matsushita Electronics Corp | |
US6614282B2 (en) | 2001-10-15 | 2003-09-02 | Denso Corporation | Clamp circuit for a semiconductor integrated circuit device |
US6737905B1 (en) | 2002-02-26 | 2004-05-18 | Denso Corporation | Clamp circuit |
US6794921B2 (en) | 2002-07-11 | 2004-09-21 | Denso Corporation | Clamp circuit |
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