JPS57123978A - Alyminum etching method and gas mixture - Google Patents
Alyminum etching method and gas mixtureInfo
- Publication number
- JPS57123978A JPS57123978A JP56164875A JP16487581A JPS57123978A JP S57123978 A JPS57123978 A JP S57123978A JP 56164875 A JP56164875 A JP 56164875A JP 16487581 A JP16487581 A JP 16487581A JP S57123978 A JPS57123978 A JP S57123978A
- Authority
- JP
- Japan
- Prior art keywords
- alyminum
- gas mixture
- etching method
- etching
- mixture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P50/267—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19661680A | 1980-10-14 | 1980-10-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57123978A true JPS57123978A (en) | 1982-08-02 |
| JPH0245714B2 JPH0245714B2 (OSRAM) | 1990-10-11 |
Family
ID=22726125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56164875A Granted JPS57123978A (en) | 1980-10-14 | 1981-10-14 | Alyminum etching method and gas mixture |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS57123978A (OSRAM) |
| DE (1) | DE3140675A1 (OSRAM) |
| GB (1) | GB2087315B (OSRAM) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60158630A (ja) * | 1984-01-30 | 1985-08-20 | Hitachi Ltd | ドライエツチング方法 |
| JPS61235576A (ja) * | 1985-04-10 | 1986-10-20 | Tokuda Seisakusho Ltd | ドライエツチング装置 |
| JPS62232926A (ja) * | 1986-04-03 | 1987-10-13 | Anelva Corp | ドライエツチング方法 |
| JPS6376437A (ja) * | 1986-09-19 | 1988-04-06 | Nec Corp | ドライエツチング方法 |
| JP2014136366A (ja) * | 2013-01-17 | 2014-07-28 | National Univ Corp Shizuoka Univ | アルミ・樹脂接合体の製造方法及びアルミ・樹脂接合体 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4505782A (en) * | 1983-03-25 | 1985-03-19 | Lfe Corporation | Plasma reactive ion etching of aluminum and aluminum alloys |
| GB2171360A (en) * | 1985-02-19 | 1986-08-28 | Oerlikon Buehrle Inc | Etching aluminum/copper alloy films |
| DE3821207A1 (de) * | 1988-06-23 | 1989-12-28 | Leybold Ag | Anordnung zum beschichten eines substrats mit dielektrika |
| DE3940820C2 (de) * | 1989-12-11 | 1998-07-09 | Leybold Ag | Verfahren zur Behandlung von Werkstücken durch reaktives Ionenätzen |
| US5397433A (en) * | 1993-08-20 | 1995-03-14 | Vlsi Technology, Inc. | Method and apparatus for patterning a metal layer |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54158343A (en) * | 1978-06-05 | 1979-12-14 | Hitachi Ltd | Dry etching method for al and al alloy |
| US4182646A (en) * | 1978-07-27 | 1980-01-08 | John Zajac | Process of etching with plasma etch gas |
| US4256534A (en) * | 1978-07-31 | 1981-03-17 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
| US4208241A (en) * | 1978-07-31 | 1980-06-17 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
| FR2432560A1 (fr) * | 1978-08-02 | 1980-02-29 | Texas Instruments Inc | Procede de decapage de metaux, en particulier d'aluminium, au plasma de tetrachlorure de silicium |
| US4209357A (en) * | 1979-05-18 | 1980-06-24 | Tegal Corporation | Plasma reactor apparatus |
-
1981
- 1981-10-13 DE DE19813140675 patent/DE3140675A1/de active Granted
- 1981-10-13 GB GB8140894A patent/GB2087315B/en not_active Expired
- 1981-10-14 JP JP56164875A patent/JPS57123978A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60158630A (ja) * | 1984-01-30 | 1985-08-20 | Hitachi Ltd | ドライエツチング方法 |
| JPS61235576A (ja) * | 1985-04-10 | 1986-10-20 | Tokuda Seisakusho Ltd | ドライエツチング装置 |
| JPS62232926A (ja) * | 1986-04-03 | 1987-10-13 | Anelva Corp | ドライエツチング方法 |
| JPS6376437A (ja) * | 1986-09-19 | 1988-04-06 | Nec Corp | ドライエツチング方法 |
| JP2014136366A (ja) * | 2013-01-17 | 2014-07-28 | National Univ Corp Shizuoka Univ | アルミ・樹脂接合体の製造方法及びアルミ・樹脂接合体 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3140675A1 (de) | 1982-06-16 |
| GB2087315A (en) | 1982-05-26 |
| GB2087315B (en) | 1984-07-18 |
| DE3140675C2 (OSRAM) | 1991-03-07 |
| JPH0245714B2 (OSRAM) | 1990-10-11 |
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