JPS57117177A - Semiconductor storage circuit - Google Patents
Semiconductor storage circuitInfo
- Publication number
- JPS57117177A JPS57117177A JP56001686A JP168681A JPS57117177A JP S57117177 A JPS57117177 A JP S57117177A JP 56001686 A JP56001686 A JP 56001686A JP 168681 A JP168681 A JP 168681A JP S57117177 A JPS57117177 A JP S57117177A
- Authority
- JP
- Japan
- Prior art keywords
- potential
- word line
- time
- floating
- node
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Static Random-Access Memory (AREA)
Abstract
PURPOSE:To eliminate up-floating of potential of a non-selective word line, by making a transistor (TR) conductive at the initial state where the word line is selected and up to a specified high potential, then making the TR non-conductive. CONSTITUTION:A TRQ15 turns on before a time T31. A node NO5 is precharged to a potential lower than the power supply potential by 2 times, VT at the same time. At the time T31, the potential on a word line WL5 is risen. Between the time T31 and T32, the selected word line WL5 keeps increasing. Thus, a word line WL6 not selected, is apt to increase from a low potential with the increase in the word line WL5, but since the potential of the node NO5 is the potential of the power supply potential VDD subtracted by 2 times VT, the up-floating of the potential of the word line WL6 not selected is cancelled by turning on of a TRQ14 and it restores to zero potential. Thus, the up-floating of the potential of non-selective word lines are avoided.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56001686A JPS57117177A (en) | 1981-01-08 | 1981-01-08 | Semiconductor storage circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56001686A JPS57117177A (en) | 1981-01-08 | 1981-01-08 | Semiconductor storage circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57117177A true JPS57117177A (en) | 1982-07-21 |
JPS6132752B2 JPS6132752B2 (en) | 1986-07-29 |
Family
ID=11508392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56001686A Granted JPS57117177A (en) | 1981-01-08 | 1981-01-08 | Semiconductor storage circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57117177A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62150800U (en) * | 1986-03-13 | 1987-09-24 |
-
1981
- 1981-01-08 JP JP56001686A patent/JPS57117177A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62150800U (en) * | 1986-03-13 | 1987-09-24 |
Also Published As
Publication number | Publication date |
---|---|
JPS6132752B2 (en) | 1986-07-29 |
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