JPS57113326A - Semiconductor photo detector - Google Patents
Semiconductor photo detectorInfo
- Publication number
- JPS57113326A JPS57113326A JP37981A JP37981A JPS57113326A JP S57113326 A JPS57113326 A JP S57113326A JP 37981 A JP37981 A JP 37981A JP 37981 A JP37981 A JP 37981A JP S57113326 A JPS57113326 A JP S57113326A
- Authority
- JP
- Japan
- Prior art keywords
- noise
- output
- pulse
- gate electrode
- negative side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000003071 parasitic effect Effects 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
PURPOSE:To effectively reduce a switching noise, by a method wherein the switching noise, produced due to a parasitic capacity possessed by a semiconductor element, and a noise signal, whose polarity is inserted, are added to the switch terminal of the semiconductor switch element. CONSTITUTION:A pulse is inputted to an input terminal 2 of a shift register 1. Simultaneously, a flip flop 11 is set, and an output from a Q' output terminal goes to a low level. When either of photo diodes 71, 72...7n is brought to ON, a pulse, raising a potential of a gate electrode of an NOS transistor 13 from a negative side to an earthing potential, simultaneously, is applied to the gate electrode of an MOS transistor 13 from output terminals of two input ORs. A noise, produced due to a parasitic capacity, is substantially removed at an input terminal at a negative side of an amplifier 9.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP37981A JPS57113326A (en) | 1981-01-07 | 1981-01-07 | Semiconductor photo detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP37981A JPS57113326A (en) | 1981-01-07 | 1981-01-07 | Semiconductor photo detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57113326A true JPS57113326A (en) | 1982-07-14 |
Family
ID=11472156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP37981A Pending JPS57113326A (en) | 1981-01-07 | 1981-01-07 | Semiconductor photo detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57113326A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6243779B1 (en) * | 1996-11-21 | 2001-06-05 | Integrated Device Technology, Inc. | Noise reduction system and method for reducing switching noise in an interface to a large width bus |
-
1981
- 1981-01-07 JP JP37981A patent/JPS57113326A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6243779B1 (en) * | 1996-11-21 | 2001-06-05 | Integrated Device Technology, Inc. | Noise reduction system and method for reducing switching noise in an interface to a large width bus |
US6763406B1 (en) * | 1996-11-21 | 2004-07-13 | Integrated Device Technology, Inc. | Noise reduction system and method for reducing switching noise in an interface to a large width bus |
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