JPS57112066A - Laminated capacitive element - Google Patents

Laminated capacitive element

Info

Publication number
JPS57112066A
JPS57112066A JP55187295A JP18729580A JPS57112066A JP S57112066 A JPS57112066 A JP S57112066A JP 55187295 A JP55187295 A JP 55187295A JP 18729580 A JP18729580 A JP 18729580A JP S57112066 A JPS57112066 A JP S57112066A
Authority
JP
Japan
Prior art keywords
layer
capacitive element
electrode
instance
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55187295A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0320905B2 (enrdf_load_stackoverflow
Inventor
Yoshimi Shiotani
Michio Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187295A priority Critical patent/JPS57112066A/ja
Publication of JPS57112066A publication Critical patent/JPS57112066A/ja
Publication of JPH0320905B2 publication Critical patent/JPH0320905B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP55187295A 1980-12-29 1980-12-29 Laminated capacitive element Granted JPS57112066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55187295A JPS57112066A (en) 1980-12-29 1980-12-29 Laminated capacitive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187295A JPS57112066A (en) 1980-12-29 1980-12-29 Laminated capacitive element

Publications (2)

Publication Number Publication Date
JPS57112066A true JPS57112066A (en) 1982-07-12
JPH0320905B2 JPH0320905B2 (enrdf_load_stackoverflow) 1991-03-20

Family

ID=16203491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187295A Granted JPS57112066A (en) 1980-12-29 1980-12-29 Laminated capacitive element

Country Status (1)

Country Link
JP (1) JPS57112066A (enrdf_load_stackoverflow)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956754A (ja) * 1982-09-24 1984-04-02 Fujitsu Ltd 半導体装置の製造方法
JPS5961956A (ja) * 1982-09-30 1984-04-09 Fujitsu Ltd ダイナミツク・メモリ
JPS59188963A (ja) * 1983-04-12 1984-10-26 Nec Corp 半導体装置
JPS59231851A (ja) * 1983-06-14 1984-12-26 Nippon Telegr & Teleph Corp <Ntt> 半導体メモリセル
JPS61129863A (ja) * 1984-11-28 1986-06-17 Hitachi Ltd 半導体装置およびその製造方法
US4685197A (en) * 1986-01-07 1987-08-11 Texas Instruments Incorporated Fabricating a stacked capacitor
US4700457A (en) * 1985-03-29 1987-10-20 Mitsubishi Denki Kabushiki Kaisha Method of making multilayer capacitor memory device
US4735915A (en) * 1983-07-05 1988-04-05 Oki Electric Industry Co., Ltd. Method of manufacturing a semiconductor random access memory element
JPS63133565A (ja) * 1986-11-25 1988-06-06 Matsushita Electronics Corp 半導体記憶装置
JPH0294560A (ja) * 1988-09-30 1990-04-05 Toshiba Corp 半導体記憶装置およびその製造方法
JPH02135772A (ja) * 1988-11-16 1990-05-24 Mitsubishi Electric Corp 半導体装置
US5057446A (en) * 1990-08-06 1991-10-15 Texas Instruments Incorporated Method of making an EEPROM with improved capacitive coupling between control gate and floating gate
US5162253A (en) * 1991-04-05 1992-11-10 Nec Corporation Method of producing capacitive element integrated circuit
US6403455B1 (en) 2000-08-31 2002-06-11 Samsung Austin Semiconductor, L.P. Methods of fabricating a memory device
US6617205B1 (en) 1995-11-20 2003-09-09 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same
US6689668B1 (en) 2000-08-31 2004-02-10 Samsung Austin Semiconductor, L.P. Methods to improve density and uniformity of hemispherical grain silicon layers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123687A (en) * 1977-04-04 1978-10-28 Nec Corp Binary memory element
JPS55154762A (en) * 1979-05-22 1980-12-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123687A (en) * 1977-04-04 1978-10-28 Nec Corp Binary memory element
JPS55154762A (en) * 1979-05-22 1980-12-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956754A (ja) * 1982-09-24 1984-04-02 Fujitsu Ltd 半導体装置の製造方法
JPS5961956A (ja) * 1982-09-30 1984-04-09 Fujitsu Ltd ダイナミツク・メモリ
JPS59188963A (ja) * 1983-04-12 1984-10-26 Nec Corp 半導体装置
JPS59231851A (ja) * 1983-06-14 1984-12-26 Nippon Telegr & Teleph Corp <Ntt> 半導体メモリセル
US4735915A (en) * 1983-07-05 1988-04-05 Oki Electric Industry Co., Ltd. Method of manufacturing a semiconductor random access memory element
JPS61129863A (ja) * 1984-11-28 1986-06-17 Hitachi Ltd 半導体装置およびその製造方法
US4700457A (en) * 1985-03-29 1987-10-20 Mitsubishi Denki Kabushiki Kaisha Method of making multilayer capacitor memory device
US4685197A (en) * 1986-01-07 1987-08-11 Texas Instruments Incorporated Fabricating a stacked capacitor
JPS63133565A (ja) * 1986-11-25 1988-06-06 Matsushita Electronics Corp 半導体記憶装置
JPH0294560A (ja) * 1988-09-30 1990-04-05 Toshiba Corp 半導体記憶装置およびその製造方法
JPH02135772A (ja) * 1988-11-16 1990-05-24 Mitsubishi Electric Corp 半導体装置
US5057446A (en) * 1990-08-06 1991-10-15 Texas Instruments Incorporated Method of making an EEPROM with improved capacitive coupling between control gate and floating gate
US5162253A (en) * 1991-04-05 1992-11-10 Nec Corporation Method of producing capacitive element integrated circuit
US6617205B1 (en) 1995-11-20 2003-09-09 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same
US6791134B2 (en) 1995-11-20 2004-09-14 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
US6798005B2 (en) 1995-11-20 2004-09-28 Hitachi, Ltd. Semiconductor memory device having large storage capacity and minimal step height between memory cell and peripheral circuits
US7196368B2 (en) 1995-11-20 2007-03-27 Renesas Technology Corp. Semiconductor memory arrangements with crown shaped capacitor arrangements trenched in interlayer dielectric film
US6403455B1 (en) 2000-08-31 2002-06-11 Samsung Austin Semiconductor, L.P. Methods of fabricating a memory device
US6689668B1 (en) 2000-08-31 2004-02-10 Samsung Austin Semiconductor, L.P. Methods to improve density and uniformity of hemispherical grain silicon layers

Also Published As

Publication number Publication date
JPH0320905B2 (enrdf_load_stackoverflow) 1991-03-20

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