JPS57112060A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57112060A
JPS57112060A JP55189179A JP18917980A JPS57112060A JP S57112060 A JPS57112060 A JP S57112060A JP 55189179 A JP55189179 A JP 55189179A JP 18917980 A JP18917980 A JP 18917980A JP S57112060 A JPS57112060 A JP S57112060A
Authority
JP
Japan
Prior art keywords
glass
pellet
layer
sealing
yield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55189179A
Other languages
Japanese (ja)
Inventor
Osamu Ishikura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP55189179A priority Critical patent/JPS57112060A/en
Publication of JPS57112060A publication Critical patent/JPS57112060A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To omit an etching process, reduce manhours, and improve the yield, by providing a glass protection film having higher softening point than sealing temperature on a pellet wall beforehand, supporting with a pair of external leads, and coating a sealing glass. CONSTITUTION:For instance, an n(-)-layer 19 and a p-layer 20 are provided on an n(+)-substrate 18. Al-electrodes 24, 25 are formed on both sides and bevel- cut. A glass protection film 23 having higher softening point than glass-sealing temperature is formed on a wall 22 of a diode pellet 17. Next, projected electrodes 15, 16 of slug leads 13, 14 are brazed to the pellet 17 to make a pellet assembly. Slurry glass solution is coated around the pellet 17. A sealed glass layer 26 is formed after heating and drying, and a diode is complete. The exposed junction is thus protected with the protection layer 23. The etching can be omitted before sealing. The bubble is prevented from occurring in the sealed glass. The electrode is reinforced in adhesive strength. The yield and reliability can be improved.
JP55189179A 1980-12-27 1980-12-27 Semiconductor device Pending JPS57112060A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55189179A JPS57112060A (en) 1980-12-27 1980-12-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55189179A JPS57112060A (en) 1980-12-27 1980-12-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57112060A true JPS57112060A (en) 1982-07-12

Family

ID=16236810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55189179A Pending JPS57112060A (en) 1980-12-27 1980-12-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57112060A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6356946A (en) * 1986-08-28 1988-03-11 Fuji Electric Co Ltd Semiconductor element
US4987476A (en) * 1988-02-01 1991-01-22 General Instrument Corporation Brazed glass pre-passivated chip rectifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6356946A (en) * 1986-08-28 1988-03-11 Fuji Electric Co Ltd Semiconductor element
US4987476A (en) * 1988-02-01 1991-01-22 General Instrument Corporation Brazed glass pre-passivated chip rectifier

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