JPS57107025A - Heat treatment of compound semiconductor - Google Patents
Heat treatment of compound semiconductorInfo
- Publication number
- JPS57107025A JPS57107025A JP18458680A JP18458680A JPS57107025A JP S57107025 A JPS57107025 A JP S57107025A JP 18458680 A JP18458680 A JP 18458680A JP 18458680 A JP18458680 A JP 18458680A JP S57107025 A JPS57107025 A JP S57107025A
- Authority
- JP
- Japan
- Prior art keywords
- fusion
- vessel
- vapor pressure
- heat treatment
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18458680A JPS57107025A (en) | 1980-12-25 | 1980-12-25 | Heat treatment of compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18458680A JPS57107025A (en) | 1980-12-25 | 1980-12-25 | Heat treatment of compound semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57107025A true JPS57107025A (en) | 1982-07-03 |
| JPS6410091B2 JPS6410091B2 (enrdf_load_stackoverflow) | 1989-02-21 |
Family
ID=16155793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18458680A Granted JPS57107025A (en) | 1980-12-25 | 1980-12-25 | Heat treatment of compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57107025A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63283020A (ja) * | 1987-05-14 | 1988-11-18 | Sanyo Electric Co Ltd | 熱処理方法 |
| KR100407955B1 (ko) * | 2001-05-29 | 2003-12-03 | 엘지전자 주식회사 | 퓨전 기판 위에 ＧａＡｓ을 형성하는 방법 |
-
1980
- 1980-12-25 JP JP18458680A patent/JPS57107025A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63283020A (ja) * | 1987-05-14 | 1988-11-18 | Sanyo Electric Co Ltd | 熱処理方法 |
| KR100407955B1 (ko) * | 2001-05-29 | 2003-12-03 | 엘지전자 주식회사 | 퓨전 기판 위에 ＧａＡｓ을 형성하는 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6410091B2 (enrdf_load_stackoverflow) | 1989-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NO813192L (no) | Fremgangsmaate til kjemisk behandling av en superlegering med hoeyt wolframinnhold, samt etsemiddel til utfoerelse av fremgangsmaaten | |
| JPS57107025A (en) | Heat treatment of compound semiconductor | |
| EP0043630A3 (en) | Improved process for the silylation of organic compounds with 1,1,1-trimethyl-n-(trimethylsilyl)silanamine by means of catalysis with certain nitrogen containing compounds and new compounds made by this process | |
| JPS5523972A (en) | Preservation of vegetable | |
| JPS5327376A (en) | Forming method of high resistanc e layer | |
| JPS5533060A (en) | Composite dry etching process | |
| JPS5375862A (en) | Surface stabilization method of semiconductor | |
| JPS559721A (en) | Production of processed shiitake mushroom | |
| JPS5650520A (en) | Processing method of semiconductor substrate | |
| JPS5314563A (en) | Fixing method of semiconductor pellet to lead frame | |
| JPS5211860A (en) | Liquid phase epitaxial device | |
| JPS52127664A (en) | High temperature vessel in supporting construction of fire proofing la yer | |
| JPS57194522A (en) | Thermal treatment of semiconductor wafer | |
| Silva Jr et al. | Control of Continuous Carburizing Furnace Operations With Propane | |
| JPS5273489A (en) | Carrie with double door at the bottom | |
| JPS5530806A (en) | Heat treatment method of semiconductor wafer | |
| JPS5326567A (en) | Production of shadow mask | |
| Hao | The Stress Intensity Factors of a Single-Edge Cracked Bar Loaded by In-Plane Transverse Forces | |
| Teskeredzic | Basophile punctations in erythrocytes of some sea fish poisoned by lead. | |
| JPS56117857A (en) | Pattern formation | |
| JPS5742122A (en) | Manufacture of compound semiconductor device | |
| JPS5244563A (en) | Method of treating sapphire substrate | |
| JPS5332883A (en) | Treating apparatus by activated gas | |
| JPS57106040A (en) | Prevention of stacking fault | |
| JPS5362467A (en) | Solder dipping method to semiconductor element |