JPS57107025A - Heat treatment of compound semiconductor - Google Patents

Heat treatment of compound semiconductor

Info

Publication number
JPS57107025A
JPS57107025A JP18458680A JP18458680A JPS57107025A JP S57107025 A JPS57107025 A JP S57107025A JP 18458680 A JP18458680 A JP 18458680A JP 18458680 A JP18458680 A JP 18458680A JP S57107025 A JPS57107025 A JP S57107025A
Authority
JP
Japan
Prior art keywords
fusion
vessel
vapor pressure
heat treatment
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18458680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6410091B2 (enrdf_load_stackoverflow
Inventor
Tsutomu Tsuji
Hideo Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP18458680A priority Critical patent/JPS57107025A/ja
Publication of JPS57107025A publication Critical patent/JPS57107025A/ja
Publication of JPS6410091B2 publication Critical patent/JPS6410091B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP18458680A 1980-12-25 1980-12-25 Heat treatment of compound semiconductor Granted JPS57107025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18458680A JPS57107025A (en) 1980-12-25 1980-12-25 Heat treatment of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18458680A JPS57107025A (en) 1980-12-25 1980-12-25 Heat treatment of compound semiconductor

Publications (2)

Publication Number Publication Date
JPS57107025A true JPS57107025A (en) 1982-07-03
JPS6410091B2 JPS6410091B2 (enrdf_load_stackoverflow) 1989-02-21

Family

ID=16155793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18458680A Granted JPS57107025A (en) 1980-12-25 1980-12-25 Heat treatment of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS57107025A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283020A (ja) * 1987-05-14 1988-11-18 Sanyo Electric Co Ltd 熱処理方法
KR100407955B1 (ko) * 2001-05-29 2003-12-03 엘지전자 주식회사 퓨전 기판 위에 GaAs을 형성하는 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283020A (ja) * 1987-05-14 1988-11-18 Sanyo Electric Co Ltd 熱処理方法
KR100407955B1 (ko) * 2001-05-29 2003-12-03 엘지전자 주식회사 퓨전 기판 위에 GaAs을 형성하는 방법

Also Published As

Publication number Publication date
JPS6410091B2 (enrdf_load_stackoverflow) 1989-02-21

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