JPS5710574B2 - - Google Patents

Info

Publication number
JPS5710574B2
JPS5710574B2 JP2340873A JP2340873A JPS5710574B2 JP S5710574 B2 JPS5710574 B2 JP S5710574B2 JP 2340873 A JP2340873 A JP 2340873A JP 2340873 A JP2340873 A JP 2340873A JP S5710574 B2 JPS5710574 B2 JP S5710574B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2340873A
Other languages
Japanese (ja)
Other versions
JPS4916393A (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4916393A publication Critical patent/JPS4916393A/ja
Publication of JPS5710574B2 publication Critical patent/JPS5710574B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H10W20/065Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by making at least a portion of the conductive part non-conductive, e.g. by oxidation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6324Formation by anodic treatments, e.g. anodic oxidation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665Porous materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69Inorganic materials
    • H10P14/692Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Electrochemical Coating By Surface Reaction (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
JP2340873A 1972-03-29 1973-02-28 Expired JPS5710574B2 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00239082A US3827949A (en) 1972-03-29 1972-03-29 Anodic oxide passivated planar aluminum metallurgy system and method of producing

Publications (2)

Publication Number Publication Date
JPS4916393A JPS4916393A (https=) 1974-02-13
JPS5710574B2 true JPS5710574B2 (https=) 1982-02-26

Family

ID=22900523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2340873A Expired JPS5710574B2 (https=) 1972-03-29 1973-02-28

Country Status (4)

Country Link
US (1) US3827949A (https=)
JP (1) JPS5710574B2 (https=)
DE (1) DE2313106C2 (https=)
FR (1) FR2177750A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3939047A (en) * 1971-11-15 1976-02-17 Nippon Electric Co., Ltd. Method for fabricating electrode structure for a semiconductor device having a shallow junction
FR2285716A1 (fr) * 1974-09-18 1976-04-16 Radiotechnique Compelec Procede pour la fabrication d'un dispositif semi-conducteur comportant une configuration de conducteurs et dispositif fabrique par ce procede
US4005452A (en) * 1974-11-15 1977-01-25 International Telephone And Telegraph Corporation Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby
US3971710A (en) * 1974-11-29 1976-07-27 Ibm Anodized articles and process of preparing same
JPS51111069A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor device
DE2539193C3 (de) * 1975-09-03 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines planeren Leiterbahnsystems für integrierte Halbleiterschaltungen
SE7803385L (sv) * 1978-03-23 1979-09-24 Olsson Kjell Ingvar Metod att meta vetskors ytspenning och anordning for genomforande av metoden ifraga
US4146440A (en) * 1978-04-03 1979-03-27 Burroughs Corporation Method for forming an aluminum interconnect structure on an integrated circuit chip
DE2902665A1 (de) * 1979-01-24 1980-08-07 Siemens Ag Verfahren zum herstellen von integrierten mos-schaltungen in silizium-gate- technologie
US4433004A (en) * 1979-07-11 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and a method for manufacturing the same
JPS5628522U (https=) * 1979-08-11 1981-03-17
JPS5633842A (en) * 1979-08-28 1981-04-04 Nec Corp Manufacture of semiconductor device
FR2466103A1 (fr) * 1979-09-18 1981-03-27 Lerouzic Jean Procede de realisation d'un reseau d'interconnexion de composants electroniques a conducteurs en aluminium et isolant en alumine et reseau d'interconnexion obtenu par ce procede
JPS56155549A (en) * 1980-04-30 1981-12-01 Fujitsu Ltd Manufacture of semiconductor device
DE3217026A1 (de) * 1981-05-06 1982-12-30 Mitsubishi Denki K.K., Tokyo Halbleitervorrichtung
JPS5886742A (ja) * 1981-11-18 1983-05-24 Nec Corp 半導体装置の製造方法
US7368045B2 (en) * 2005-01-27 2008-05-06 International Business Machines Corporation Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow
JP2009132974A (ja) * 2007-11-30 2009-06-18 Fujifilm Corp 微細構造体

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3741880A (en) * 1969-10-25 1973-06-26 Nippon Electric Co Method of forming electrical connections in a semiconductor integrated circuit

Also Published As

Publication number Publication date
DE2313106A1 (de) 1973-10-11
DE2313106C2 (de) 1985-03-07
FR2177750A1 (https=) 1973-11-09
US3827949A (en) 1974-08-06
JPS4916393A (https=) 1974-02-13

Similar Documents

Publication Publication Date Title
JPS5710574B2 (https=)
FR2201370A1 (https=)
JPS4948178A (https=)
FR2203516A5 (https=)
FR2190989A1 (https=)
JPS4992328A (https=)
JPS5215015Y2 (https=)
JPS48100701U (https=)
JPS5346562Y2 (https=)
FR2188662A5 (https=)
JPS49102465U (https=)
CH562900A5 (https=)
CH567342A5 (https=)
CH563797A5 (https=)
CH562325A5 (https=)
CH562113A5 (https=)
CH562000A5 (https=)
CH561826A5 (https=)
CH561802A5 (https=)
CH562476A5 (https=)
CH562995A5 (https=)
CH563024A5 (https=)
CH562336A5 (https=)
CH563027A5 (https=)
CH563029A5 (https=)