FR2177750A1 - - Google Patents
Info
- Publication number
- FR2177750A1 FR2177750A1 FR7305440A FR7305440A FR2177750A1 FR 2177750 A1 FR2177750 A1 FR 2177750A1 FR 7305440 A FR7305440 A FR 7305440A FR 7305440 A FR7305440 A FR 7305440A FR 2177750 A1 FR2177750 A1 FR 2177750A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
- H10W20/065—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by making at least a portion of the conductive part non-conductive, e.g. by oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/665—Porous materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00239082A US3827949A (en) | 1972-03-29 | 1972-03-29 | Anodic oxide passivated planar aluminum metallurgy system and method of producing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2177750A1 true FR2177750A1 (https=) | 1973-11-09 |
Family
ID=22900523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7305440A Withdrawn FR2177750A1 (https=) | 1972-03-29 | 1973-02-06 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3827949A (https=) |
| JP (1) | JPS5710574B2 (https=) |
| DE (1) | DE2313106C2 (https=) |
| FR (1) | FR2177750A1 (https=) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3939047A (en) * | 1971-11-15 | 1976-02-17 | Nippon Electric Co., Ltd. | Method for fabricating electrode structure for a semiconductor device having a shallow junction |
| FR2285716A1 (fr) * | 1974-09-18 | 1976-04-16 | Radiotechnique Compelec | Procede pour la fabrication d'un dispositif semi-conducteur comportant une configuration de conducteurs et dispositif fabrique par ce procede |
| US4005452A (en) * | 1974-11-15 | 1977-01-25 | International Telephone And Telegraph Corporation | Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby |
| US3971710A (en) * | 1974-11-29 | 1976-07-27 | Ibm | Anodized articles and process of preparing same |
| JPS51111069A (en) * | 1975-03-26 | 1976-10-01 | Hitachi Ltd | Semiconductor device |
| DE2539193C3 (de) * | 1975-09-03 | 1979-04-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung eines planeren Leiterbahnsystems für integrierte Halbleiterschaltungen |
| SE7803385L (sv) * | 1978-03-23 | 1979-09-24 | Olsson Kjell Ingvar | Metod att meta vetskors ytspenning och anordning for genomforande av metoden ifraga |
| US4146440A (en) * | 1978-04-03 | 1979-03-27 | Burroughs Corporation | Method for forming an aluminum interconnect structure on an integrated circuit chip |
| DE2902665A1 (de) * | 1979-01-24 | 1980-08-07 | Siemens Ag | Verfahren zum herstellen von integrierten mos-schaltungen in silizium-gate- technologie |
| US4433004A (en) * | 1979-07-11 | 1984-02-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device and a method for manufacturing the same |
| JPS5628522U (https=) * | 1979-08-11 | 1981-03-17 | ||
| JPS5633842A (en) * | 1979-08-28 | 1981-04-04 | Nec Corp | Manufacture of semiconductor device |
| FR2466103A1 (fr) * | 1979-09-18 | 1981-03-27 | Lerouzic Jean | Procede de realisation d'un reseau d'interconnexion de composants electroniques a conducteurs en aluminium et isolant en alumine et reseau d'interconnexion obtenu par ce procede |
| JPS56155549A (en) * | 1980-04-30 | 1981-12-01 | Fujitsu Ltd | Manufacture of semiconductor device |
| DE3217026A1 (de) * | 1981-05-06 | 1982-12-30 | Mitsubishi Denki K.K., Tokyo | Halbleitervorrichtung |
| JPS5886742A (ja) * | 1981-11-18 | 1983-05-24 | Nec Corp | 半導体装置の製造方法 |
| US7368045B2 (en) * | 2005-01-27 | 2008-05-06 | International Business Machines Corporation | Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow |
| JP2009132974A (ja) * | 2007-11-30 | 2009-06-18 | Fujifilm Corp | 微細構造体 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3741880A (en) * | 1969-10-25 | 1973-06-26 | Nippon Electric Co | Method of forming electrical connections in a semiconductor integrated circuit |
-
1972
- 1972-03-29 US US00239082A patent/US3827949A/en not_active Expired - Lifetime
-
1973
- 1973-02-06 FR FR7305440A patent/FR2177750A1/fr not_active Withdrawn
- 1973-02-28 JP JP2340873A patent/JPS5710574B2/ja not_active Expired
- 1973-03-16 DE DE2313106A patent/DE2313106C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2313106A1 (de) | 1973-10-11 |
| DE2313106C2 (de) | 1985-03-07 |
| JPS5710574B2 (https=) | 1982-02-26 |
| US3827949A (en) | 1974-08-06 |
| JPS4916393A (https=) | 1974-02-13 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |