JPS57104934A - Photomask - Google Patents

Photomask

Info

Publication number
JPS57104934A
JPS57104934A JP18310880A JP18310880A JPS57104934A JP S57104934 A JPS57104934 A JP S57104934A JP 18310880 A JP18310880 A JP 18310880A JP 18310880 A JP18310880 A JP 18310880A JP S57104934 A JPS57104934 A JP S57104934A
Authority
JP
Japan
Prior art keywords
data
photomask
exposure time
mask
written
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18310880A
Other languages
Japanese (ja)
Inventor
Yukimichi Kanedaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP18310880A priority Critical patent/JPS57104934A/en
Publication of JPS57104934A publication Critical patent/JPS57104934A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70541—Tagging, i.e. hardware or software tagging of features or components, e.g. using tagging scripts or tagging identifier codes for identification of chips, shots or wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To eliminate a setting mistake for the exposure time and to increase the yield, by writing readable optimum exposure data to a mask with a photomask transfer device and thus automatically deciding the optimum exposure time. CONSTITUTION:The pattern size of a photomask 1 is measured, and then the measured value is supplied to a data writing device incorporating a laser beam processor. The optimum exposure time is calculated based on the photoengraving conditions of a wafer using the photomask. Then the exposure conditional data 3 is written to the surface of the photomask. The data 3 is obtained by drilling a hole 4 at an opaque area of the mask 1 by means of a laser beam process. The measured value is written by the dot or bar code system using 8 bits. The data 3 is read by an exclusuve reader at the side of a mask matching device to automatically decide the exposure time.
JP18310880A 1980-12-23 1980-12-23 Photomask Pending JPS57104934A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18310880A JPS57104934A (en) 1980-12-23 1980-12-23 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18310880A JPS57104934A (en) 1980-12-23 1980-12-23 Photomask

Publications (1)

Publication Number Publication Date
JPS57104934A true JPS57104934A (en) 1982-06-30

Family

ID=16129907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18310880A Pending JPS57104934A (en) 1980-12-23 1980-12-23 Photomask

Country Status (1)

Country Link
JP (1) JPS57104934A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61173943U (en) * 1985-04-18 1986-10-29
EP2133742A1 (en) * 2007-07-19 2009-12-16 Canon Kabushiki Kaisha Exposure method using pattern dependant dose control

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434777A (en) * 1977-08-24 1979-03-14 Hitachi Ltd Mask aligner
JPS5788450A (en) * 1980-11-21 1982-06-02 Nec Corp Photomask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434777A (en) * 1977-08-24 1979-03-14 Hitachi Ltd Mask aligner
JPS5788450A (en) * 1980-11-21 1982-06-02 Nec Corp Photomask

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61173943U (en) * 1985-04-18 1986-10-29
EP2133742A1 (en) * 2007-07-19 2009-12-16 Canon Kabushiki Kaisha Exposure method using pattern dependant dose control
US7846625B2 (en) 2007-07-19 2010-12-07 Canon Kabushiki Kaisha Phase shift mask

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