JPS5694657A - Mos-type semiconductor ic device - Google Patents

Mos-type semiconductor ic device

Info

Publication number
JPS5694657A
JPS5694657A JP17169079A JP17169079A JPS5694657A JP S5694657 A JPS5694657 A JP S5694657A JP 17169079 A JP17169079 A JP 17169079A JP 17169079 A JP17169079 A JP 17169079A JP S5694657 A JPS5694657 A JP S5694657A
Authority
JP
Japan
Prior art keywords
inverter
mos
pair
supplied
supply voltages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17169079A
Other languages
Japanese (ja)
Inventor
Ichiro Kobayashi
Yoshiaki Moriya
Yukio Kitagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17169079A priority Critical patent/JPS5694657A/en
Publication of JPS5694657A publication Critical patent/JPS5694657A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enlarge the margin of high and low level input voltage of each inverter by prescribing a pair of supply voltages supplied to each inverter and threshold voltage therefor in an IC having a plurality of MOS-type inverters for input buffer. CONSTITUTION:In the MOS-type IC having a plurality of MOS-type inverters for input buffer, a pair of supply voltages supplied to each inverter are prescribed respectively as follows: (VA-wj)>(VB+vj), wj>=0, vj>=0 (where 1<=j<=n) when respective voltages are VA-WL, VB+v1, VA-w2 and VB+v2,... VA-wn and VB+ vn. Moreover, the circuit threshold value to be determined when the pair of supply voltages VA and VB are supplied to the 1st inverter is stipulated as Vthj, and the part of fluctuation DELTAVthj of the threshold value voltage generated when the pair of voltages VA-w(n-j+1) and VB+vj are supplied to each inverter is offset in the following way. Vth1<=Vth2<=...<=Vthj<=...Vthn; or it is prescribed so that the above relation is turned to be reverse.
JP17169079A 1979-12-27 1979-12-27 Mos-type semiconductor ic device Pending JPS5694657A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17169079A JPS5694657A (en) 1979-12-27 1979-12-27 Mos-type semiconductor ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17169079A JPS5694657A (en) 1979-12-27 1979-12-27 Mos-type semiconductor ic device

Publications (1)

Publication Number Publication Date
JPS5694657A true JPS5694657A (en) 1981-07-31

Family

ID=15927878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17169079A Pending JPS5694657A (en) 1979-12-27 1979-12-27 Mos-type semiconductor ic device

Country Status (1)

Country Link
JP (1) JPS5694657A (en)

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