JPS5690553A - Preventive circuit for electrostatic breakdown - Google Patents

Preventive circuit for electrostatic breakdown

Info

Publication number
JPS5690553A
JPS5690553A JP16717379A JP16717379A JPS5690553A JP S5690553 A JPS5690553 A JP S5690553A JP 16717379 A JP16717379 A JP 16717379A JP 16717379 A JP16717379 A JP 16717379A JP S5690553 A JPS5690553 A JP S5690553A
Authority
JP
Japan
Prior art keywords
sbd
voltage
breakdown
transistor
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16717379A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0113227B2 (esLanguage
Inventor
Terumasa Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16717379A priority Critical patent/JPS5690553A/ja
Publication of JPS5690553A publication Critical patent/JPS5690553A/ja
Publication of JPH0113227B2 publication Critical patent/JPH0113227B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP16717379A 1979-12-21 1979-12-21 Preventive circuit for electrostatic breakdown Granted JPS5690553A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16717379A JPS5690553A (en) 1979-12-21 1979-12-21 Preventive circuit for electrostatic breakdown

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16717379A JPS5690553A (en) 1979-12-21 1979-12-21 Preventive circuit for electrostatic breakdown

Publications (2)

Publication Number Publication Date
JPS5690553A true JPS5690553A (en) 1981-07-22
JPH0113227B2 JPH0113227B2 (esLanguage) 1989-03-03

Family

ID=15844764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16717379A Granted JPS5690553A (en) 1979-12-21 1979-12-21 Preventive circuit for electrostatic breakdown

Country Status (1)

Country Link
JP (1) JPS5690553A (esLanguage)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5879749A (ja) * 1981-11-06 1983-05-13 Nec Corp 半導体集積回路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49114380A (esLanguage) * 1973-02-28 1974-10-31
JPS5310486A (en) * 1976-07-15 1978-01-30 Matsushita Electric Ind Co Ltd Location of ultrasonic probe and device therefor
JPS5358777A (en) * 1976-11-06 1978-05-26 Mitsubishi Electric Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49114380A (esLanguage) * 1973-02-28 1974-10-31
JPS5310486A (en) * 1976-07-15 1978-01-30 Matsushita Electric Ind Co Ltd Location of ultrasonic probe and device therefor
JPS5358777A (en) * 1976-11-06 1978-05-26 Mitsubishi Electric Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5879749A (ja) * 1981-11-06 1983-05-13 Nec Corp 半導体集積回路

Also Published As

Publication number Publication date
JPH0113227B2 (esLanguage) 1989-03-03

Similar Documents

Publication Publication Date Title
GB1284964A (en) Automatically resetting voltage transient rpotection device
MY106702A (en) Semiconductor device having protection circuit.
KR940008075A (ko) 공급 전압범위를 넘는 입력 요구 동작용 정전방전(esd)보호
SE8200230L (sv) Overspenningsskydd for en ledningskrets
SE8500924L (sv) Halvledaranordning innefattande en integrerad halvledarkrets av cmos-typ
IE32763L (en) High speed switching rectifier
JPS5679463A (en) Semiconductor integrated circuit
JPS577151A (en) Monolithic ic circuit
JPS5361982A (en) Semiconductor integrated circuit device
JPS5690553A (en) Preventive circuit for electrostatic breakdown
JPS552354A (en) Power circuit
JPS5619657A (en) Semiconductor ic
JPS5619656A (en) Semiconductor ic
GB1191133A (en) A Semiconductor Device with an Emitter, Base and Collector Region, and a Protective Diode
JPS648674A (en) Vertical mos-fet
JPS5580352A (en) Transistor with high breakdown voltage
JPS57115854A (en) Input protective circuit
JPS5422550A (en) Overvoltage protective circuit
JPS54141578A (en) Semiconductor device
JPS5640279A (en) Semiconductor integrated circuit
JPS5640271A (en) Semiconductor integrated circuit
JPS5585061A (en) Protective circuit for transistor
JPS54118548A (en) Transistor circuit with protection circuit
SU729736A1 (ru) Устройство дл защиты тиристора
JPS52128077A (en) Insulation gate type semiconductor device