JPS5690533A - Detection of p-n junction of multi-element semiconductor - Google Patents
Detection of p-n junction of multi-element semiconductorInfo
- Publication number
- JPS5690533A JPS5690533A JP16734379A JP16734379A JPS5690533A JP S5690533 A JPS5690533 A JP S5690533A JP 16734379 A JP16734379 A JP 16734379A JP 16734379 A JP16734379 A JP 16734379A JP S5690533 A JPS5690533 A JP S5690533A
- Authority
- JP
- Japan
- Prior art keywords
- metal piece
- junction
- layer
- type layer
- cleaved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To facilitate the detection of the junction position by attaching an electrolyte containing a cupric sulfate to the junction to yield a copper plating on a P-type layer along with a negative voltage applied to the P-type layer exposed of a multi- element semiconductor substrate as cleaved and a positive voltage to an N-type layer. CONSTITUTION:An insulating resin 3 is embedded into one end A of a pair of metal pieces 1 and 2 made of a stainless steel or the like to make such a tweezers construction with the metal pieces 1 and 2 which pinch a semiconductor substrate 4 of PbS1-xSex cleaved at the other end B thereof. At this point, a cleaved surface C is so projected to cover an N-type layer 4B sufficiently with the tip of the metal piece 2 while the metal piece 1 is shortened enough to leave a part of the layer 4A expose. In this arranement, while DC power source is applied to the metal piece 4B through the metal piece 2 on the positive side thereof and to the layer 4A through the metal piece 1 on the negative side thereof, an electrolyte containing cupric sulfate is attached to a cleaved surface C with an applicator. Thus, a copper plating is made on the layer 4A alone thereby allowing the detecting of the position of a P-N junction 6.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16734379A JPS5690533A (en) | 1979-12-21 | 1979-12-21 | Detection of p-n junction of multi-element semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16734379A JPS5690533A (en) | 1979-12-21 | 1979-12-21 | Detection of p-n junction of multi-element semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5690533A true JPS5690533A (en) | 1981-07-22 |
Family
ID=15847962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16734379A Pending JPS5690533A (en) | 1979-12-21 | 1979-12-21 | Detection of p-n junction of multi-element semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5690533A (en) |
-
1979
- 1979-12-21 JP JP16734379A patent/JPS5690533A/en active Pending
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