JPS5689004A - Method of measuring thickness of multilayered epitaxial growth layer - Google Patents

Method of measuring thickness of multilayered epitaxial growth layer

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Publication number
JPS5689004A
JPS5689004A JP16721479A JP16721479A JPS5689004A JP S5689004 A JPS5689004 A JP S5689004A JP 16721479 A JP16721479 A JP 16721479A JP 16721479 A JP16721479 A JP 16721479A JP S5689004 A JPS5689004 A JP S5689004A
Authority
JP
Japan
Prior art keywords
probe
etching
liquid
tip
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16721479A
Other languages
Japanese (ja)
Inventor
Kazuo Kondo
Norihiro Odaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16721479A priority Critical patent/JPS5689004A/en
Publication of JPS5689004A publication Critical patent/JPS5689004A/en
Pending legal-status Critical Current

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  • Length Measuring Devices With Unspecified Measuring Means (AREA)

Abstract

PURPOSE: To facilitate measurement by measuring the thickness of a layer from the falling speed of an etching liquid in a probe which can flow back the etching liquid through two thin pipes having their openings a tip etching-liquid reserve groove, by flowing the etching liquid with the probe in close contact with the surface of an epitaxial layer to be measured.
CONSTITUTION: Epitaxial wafer 4 is mounted on supporting base 6, the tip of probe 1 is brought into close contact with the surface of epitaxial layer 5 on substrate 4, and constant pressure is applied from above to press it with probe fixing jig 7. To probe fixing jig 7, electric micrometer 8 is connected. Through thin pipes 2 of probe 1, an etching liquid is flowed at a constant flow speed by way of etching-liquid reserve groove 3 at the tip and the falling speed of the liquid in probe 2 is detected by electric micrometer 8 to measure the thickness of epitaxial layer 5. The measurement can be taken easily without cleaving the wafer and the etching area is extremely small, so that the wafer can be used effectively.
COPYRIGHT: (C)1981,JPO&Japio
JP16721479A 1979-12-22 1979-12-22 Method of measuring thickness of multilayered epitaxial growth layer Pending JPS5689004A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16721479A JPS5689004A (en) 1979-12-22 1979-12-22 Method of measuring thickness of multilayered epitaxial growth layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16721479A JPS5689004A (en) 1979-12-22 1979-12-22 Method of measuring thickness of multilayered epitaxial growth layer

Publications (1)

Publication Number Publication Date
JPS5689004A true JPS5689004A (en) 1981-07-20

Family

ID=15845535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16721479A Pending JPS5689004A (en) 1979-12-22 1979-12-22 Method of measuring thickness of multilayered epitaxial growth layer

Country Status (1)

Country Link
JP (1) JPS5689004A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61290317A (en) * 1985-06-18 1986-12-20 Mitsubishi Electric Corp Measurement for thickness of thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61290317A (en) * 1985-06-18 1986-12-20 Mitsubishi Electric Corp Measurement for thickness of thin film
JPH0431321B2 (en) * 1985-06-18 1992-05-26

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