JPS5688819A - Manufacture of silicon for semiconductor element - Google Patents

Manufacture of silicon for semiconductor element

Info

Publication number
JPS5688819A
JPS5688819A JP15673680A JP15673680A JPS5688819A JP S5688819 A JPS5688819 A JP S5688819A JP 15673680 A JP15673680 A JP 15673680A JP 15673680 A JP15673680 A JP 15673680A JP S5688819 A JPS5688819 A JP S5688819A
Authority
JP
Japan
Prior art keywords
silicon
manufacture
semiconductor element
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15673680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6346005B2 (enExample
Inventor
Auritsuhi Fuuberuto
Guraapumaiyaa Yoozefu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5688819A publication Critical patent/JPS5688819A/ja
Publication of JPS6346005B2 publication Critical patent/JPS6346005B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
    • C03C3/061—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz by leaching a soluble phase and consolidating
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/023—Preparation by reduction of silica or free silica-containing material
    • C01B33/025—Preparation by reduction of silica or free silica-containing material with carbon or a solid carbonaceous material, i.e. carbo-thermal process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Glass Compositions (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Glass Melting And Manufacturing (AREA)
JP15673680A 1979-11-08 1980-11-07 Manufacture of silicon for semiconductor element Granted JPS5688819A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2945141A DE2945141C2 (de) 1979-11-08 1979-11-08 Verfahren zum Herstellen von für Halbleiterbauelemente verwendbarem Silizium aus Quarzsand

Publications (2)

Publication Number Publication Date
JPS5688819A true JPS5688819A (en) 1981-07-18
JPS6346005B2 JPS6346005B2 (enExample) 1988-09-13

Family

ID=6085497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15673680A Granted JPS5688819A (en) 1979-11-08 1980-11-07 Manufacture of silicon for semiconductor element

Country Status (5)

Country Link
US (1) US4294811A (enExample)
EP (1) EP0029157B1 (enExample)
JP (1) JPS5688819A (enExample)
CA (1) CA1156816A (enExample)
DE (1) DE2945141C2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2004083145A1 (ja) * 2003-03-20 2006-06-22 独立行政法人科学技術振興機構 高ケイ酸ガラスの製造方法および高ケイ酸ガラス

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3123009A1 (de) * 1981-06-10 1982-12-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von fuer solarzellen verwendbarem silizium
DE3150539A1 (de) * 1981-12-21 1983-06-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von fuer halbleiterbauelemente, insbesondere fuer solarzellen, verwendbarem silizium
DE3215981A1 (de) * 1982-04-29 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen hochreiner ausgangsmaterialien fuer die fertigung von silizium fuer solarzellen nach dem carbothermischen reduktionsverfahren
DE3246121A1 (de) * 1982-12-13 1984-06-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von borfreiem siliziumdioxid
US4798659A (en) * 1986-12-22 1989-01-17 Dow Corning Corporation Addition of calcium compounds to the carbothermic reduction of silica
DE3741393A1 (de) * 1987-12-07 1989-06-15 Siemens Ag Verfahren zum herstellen von aus hochreinem sio(pfeil abwaerts)2(pfeil abwaerts) bestehenden formkoerpern
DE3814863A1 (de) * 1988-05-02 1989-11-16 Siemens Ag Verfahren zum herstellen von vielschichtenkeramik auf silikatbasis
US6537796B1 (en) * 1999-05-14 2003-03-25 Brookhaven Science Associates, Llc Conversion of geothermal waste to commercial products including silica
DE102008041334A1 (de) * 2008-08-19 2010-02-25 Evonik Degussa Gmbh Herstellung von Silizium durch Umsetzung von Siliziumoxid und Siliziumcarbid gegebenenfalls in Gegenwart einer zweiten Kohlenstoffquelle
US20110262336A1 (en) 2008-09-30 2011-10-27 Hartwig Rauleder Production of solar-grade silicon from silicon dioxide
DE102008042498A1 (de) * 2008-09-30 2010-04-01 Evonik Degussa Gmbh Verfahren zur Pyrolyse von Kohlehydraten
EP2322474A1 (de) 2009-11-16 2011-05-18 Evonik Degussa GmbH Verfahren zur Pyrolyse von Kohlehydraten
EP2322476A1 (de) 2009-11-16 2011-05-18 Evonik Degussa GmbH Neues Verfahren zur Herstellung von Silicium
DE102012202586A1 (de) 2012-02-21 2013-08-22 Evonik Degussa Gmbh Verfahren zur Herstellung von Silizium über carbothermische Reduktion von Siliciumoxid mit Kohlenstoff in einem Schmelzofen
WO2014186051A1 (en) * 2013-05-17 2014-11-20 Dow Corning Corporation Production of silicon tetrachloride via carbochlorination of silica
CN109293225A (zh) * 2018-11-08 2019-02-01 连云港善发石英制品有限公司 一种厚壁石英玻璃管的生产方法
CN114378026A (zh) * 2021-12-17 2022-04-22 中建材蚌埠玻璃工业设计研究院有限公司 一种制备电子级高纯石英砂的方法
CN117486222B (zh) * 2023-11-03 2025-08-15 昆明理工大学 一种高纯石英砂的提纯方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD11062A (enExample) *
US2106744A (en) * 1934-03-19 1938-02-01 Corning Glass Works Treated borosilicate glass
US3650721A (en) * 1969-05-06 1972-03-21 Ppg Industries Inc Method of forming micro-porous glass fibers
DE2623413C2 (de) * 1976-05-25 1985-01-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von für Halbleiterbauelemente verwendbarem Silicium
US4247528A (en) * 1979-04-11 1981-01-27 Dow Corning Corporation Method for producing solar-cell-grade silicon

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2004083145A1 (ja) * 2003-03-20 2006-06-22 独立行政法人科学技術振興機構 高ケイ酸ガラスの製造方法および高ケイ酸ガラス
JP4521831B2 (ja) * 2003-03-20 2010-08-11 独立行政法人科学技術振興機構 高ケイ酸ガラスの製造方法および高ケイ酸ガラス
US7975508B2 (en) 2003-03-20 2011-07-12 Japan Science And Technology Agency Method for producing high silicate glass and high silicate glass

Also Published As

Publication number Publication date
US4294811A (en) 1981-10-13
JPS6346005B2 (enExample) 1988-09-13
DE2945141A1 (de) 1981-05-14
CA1156816A (en) 1983-11-15
EP0029157B1 (de) 1983-02-09
DE2945141C2 (de) 1983-10-27
EP0029157A1 (de) 1981-05-27

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