JPS568873A - Bipolar transistor - Google Patents

Bipolar transistor

Info

Publication number
JPS568873A
JPS568873A JP8466579A JP8466579A JPS568873A JP S568873 A JPS568873 A JP S568873A JP 8466579 A JP8466579 A JP 8466579A JP 8466579 A JP8466579 A JP 8466579A JP S568873 A JPS568873 A JP S568873A
Authority
JP
Japan
Prior art keywords
collector
base
gates
amplification factor
dependence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8466579A
Other languages
English (en)
Inventor
Yoshitaka Tawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP8466579A priority Critical patent/JPS568873A/ja
Publication of JPS568873A publication Critical patent/JPS568873A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
JP8466579A 1979-07-04 1979-07-04 Bipolar transistor Pending JPS568873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8466579A JPS568873A (en) 1979-07-04 1979-07-04 Bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8466579A JPS568873A (en) 1979-07-04 1979-07-04 Bipolar transistor

Publications (1)

Publication Number Publication Date
JPS568873A true JPS568873A (en) 1981-01-29

Family

ID=13837004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8466579A Pending JPS568873A (en) 1979-07-04 1979-07-04 Bipolar transistor

Country Status (1)

Country Link
JP (1) JPS568873A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186361A (en) * 1981-05-12 1982-11-16 Fuji Electric Co Ltd Transistor having high-dielectric strength
DE10206133C1 (de) * 2002-02-14 2003-09-25 Infineon Technologies Ag Vertikaler Bipolartransistor mit innewohnendem Junction-Feldeffekttransistor (J-FET)
EP2058854A3 (en) * 2007-11-07 2012-03-21 Acreo AB A semiconductor device
CN108054215A (zh) * 2017-12-21 2018-05-18 深圳市晶特智造科技有限公司 结型场效应晶体管及其制作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244574A (en) * 1975-10-06 1977-04-07 Nec Corp Semiconductor device
JPS5436189A (en) * 1977-08-26 1979-03-16 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244574A (en) * 1975-10-06 1977-04-07 Nec Corp Semiconductor device
JPS5436189A (en) * 1977-08-26 1979-03-16 Mitsubishi Electric Corp Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186361A (en) * 1981-05-12 1982-11-16 Fuji Electric Co Ltd Transistor having high-dielectric strength
DE10206133C1 (de) * 2002-02-14 2003-09-25 Infineon Technologies Ag Vertikaler Bipolartransistor mit innewohnendem Junction-Feldeffekttransistor (J-FET)
US6894367B2 (en) 2002-02-14 2005-05-17 Infineon Technologies Ag Vertical bipolar transistor
EP2058854A3 (en) * 2007-11-07 2012-03-21 Acreo AB A semiconductor device
CN108054215A (zh) * 2017-12-21 2018-05-18 深圳市晶特智造科技有限公司 结型场效应晶体管及其制作方法
CN108054215B (zh) * 2017-12-21 2020-08-28 南京溧水高新创业投资管理有限公司 结型场效应晶体管及其制作方法

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