JPS568501B2 - - Google Patents
Info
- Publication number
- JPS568501B2 JPS568501B2 JP5290673A JP5290673A JPS568501B2 JP S568501 B2 JPS568501 B2 JP S568501B2 JP 5290673 A JP5290673 A JP 5290673A JP 5290673 A JP5290673 A JP 5290673A JP S568501 B2 JPS568501 B2 JP S568501B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5290673A JPS568501B2 (de) | 1973-05-12 | 1973-05-12 | |
| IT2257074A IT1012257B (it) | 1973-05-12 | 1974-05-10 | Dispositivo semiconduttore |
| NL7406423A NL7406423A (de) | 1973-05-12 | 1974-05-13 | |
| FR7416453A FR2229141B3 (de) | 1973-05-12 | 1974-05-13 | |
| DE19742423114 DE2423114A1 (de) | 1973-05-12 | 1974-05-13 | Halbleitervorrichtung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5290673A JPS568501B2 (de) | 1973-05-12 | 1973-05-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS503579A JPS503579A (de) | 1975-01-14 |
| JPS568501B2 true JPS568501B2 (de) | 1981-02-24 |
Family
ID=12927870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5290673A Expired JPS568501B2 (de) | 1973-05-12 | 1973-05-12 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS568501B2 (de) |
| DE (1) | DE2423114A1 (de) |
| FR (1) | FR2229141B3 (de) |
| IT (1) | IT1012257B (de) |
| NL (1) | NL7406423A (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55125663A (en) * | 1979-03-22 | 1980-09-27 | Hitachi Ltd | Semiconductor integrated circuit |
| DE2929869C2 (de) * | 1979-07-24 | 1986-04-30 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch integrierte CMOS-Inverterschaltungsanordnung |
| US4253105A (en) * | 1980-07-03 | 1981-02-24 | Rca Corporation | Semiconductor power device incorporating a schottky barrier diode between base and emitter of a PNP device |
| JPH0714023B2 (ja) * | 1986-09-29 | 1995-02-15 | 松下電子工業株式会社 | 半導体装置 |
| CN105957886B (zh) * | 2016-06-28 | 2019-05-14 | 中国科学院微电子研究所 | 一种碳化硅双极结型晶体管 |
-
1973
- 1973-05-12 JP JP5290673A patent/JPS568501B2/ja not_active Expired
-
1974
- 1974-05-10 IT IT2257074A patent/IT1012257B/it active
- 1974-05-13 DE DE19742423114 patent/DE2423114A1/de not_active Withdrawn
- 1974-05-13 NL NL7406423A patent/NL7406423A/xx not_active Application Discontinuation
- 1974-05-13 FR FR7416453A patent/FR2229141B3/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2229141A1 (de) | 1974-12-06 |
| JPS503579A (de) | 1975-01-14 |
| DE2423114A1 (de) | 1974-11-28 |
| FR2229141B3 (de) | 1977-03-11 |
| NL7406423A (de) | 1974-11-14 |
| IT1012257B (it) | 1977-03-10 |