JPS5684025A - Semiconductor sense amplifier - Google Patents

Semiconductor sense amplifier

Info

Publication number
JPS5684025A
JPS5684025A JP16222179A JP16222179A JPS5684025A JP S5684025 A JPS5684025 A JP S5684025A JP 16222179 A JP16222179 A JP 16222179A JP 16222179 A JP16222179 A JP 16222179A JP S5684025 A JPS5684025 A JP S5684025A
Authority
JP
Japan
Prior art keywords
voltage
resistance
input voltage
potential
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16222179A
Other languages
Japanese (ja)
Inventor
Tatsuo Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16222179A priority Critical patent/JPS5684025A/en
Publication of JPS5684025A publication Critical patent/JPS5684025A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Manipulation Of Pulses (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To make it possible to sense and amplify even a voltage differing much from a normal threshold voltage, by clamping an input voltage. CONSTITUTION:To sense an input voltage while the threshold voltage of input FET24 is set to 0.7V and the input voltage is 4V, the ratio of the value of the 1st resistance 16 to that of the 2nd resistance 18 should be 3.3:0.7 when the 2nd potential source terminal 15 is grounded. A change in potential at connection point 17 can be made larger by holding the 2nd potential source terminal 15 at a negative potential. When the value ratio of resistance 16 to resistance 18 is changed to 3.2: 3.3, an input voltage of 3.5V develops an input voltage of 0.29V to cnnection point 17 and that of 4.5V develops 1.05 to point 17, so that an enough potential change to drive FET24 can be obtained. In addition, this IC-implementation is facilitated by using MOSFET for voltage division.
JP16222179A 1979-12-13 1979-12-13 Semiconductor sense amplifier Pending JPS5684025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16222179A JPS5684025A (en) 1979-12-13 1979-12-13 Semiconductor sense amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16222179A JPS5684025A (en) 1979-12-13 1979-12-13 Semiconductor sense amplifier

Publications (1)

Publication Number Publication Date
JPS5684025A true JPS5684025A (en) 1981-07-09

Family

ID=15750259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16222179A Pending JPS5684025A (en) 1979-12-13 1979-12-13 Semiconductor sense amplifier

Country Status (1)

Country Link
JP (1) JPS5684025A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4839157A (en) * 1971-09-21 1973-06-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4839157A (en) * 1971-09-21 1973-06-08

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