JPS5683034A - Manufacture of one dimentional array type element - Google Patents

Manufacture of one dimentional array type element

Info

Publication number
JPS5683034A
JPS5683034A JP15924779A JP15924779A JPS5683034A JP S5683034 A JPS5683034 A JP S5683034A JP 15924779 A JP15924779 A JP 15924779A JP 15924779 A JP15924779 A JP 15924779A JP S5683034 A JPS5683034 A JP S5683034A
Authority
JP
Japan
Prior art keywords
dimentional array
blocks
elements
array type
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15924779A
Other languages
Japanese (ja)
Inventor
Yoji Fujii
Junichiro Minowa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP15924779A priority Critical patent/JPS5683034A/en
Publication of JPS5683034A publication Critical patent/JPS5683034A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Weting (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE:To make individual elements to be one dimentional array type with high accuracy by a method wherein reversed stand type grooves of which the shape of sectional area having the prescribed angles are formed by anisotropic etching on the Si substrate, and blocks are adhered to the bottom faces of groove. CONSTITUTION:Protective films 5 for etching are provided at the prescribed interval on the (112) Si substrate as shown in the figure looking from the (110) direction, and anisotropic etching is performed with KOH aqueous solution, etc., to form the reversed stand type grooves having a vertical side wall and another wall crossing with the bottom face at 160 deg. angles. Blocks of glass, metal, etc., are adhered to the flat bottom faces of the grooves, and light emitting elements, etc., are mounted on the blocks to produce the one dimentional array. Because the positioning of the elements can be performed accurately by this way, so that the one dimentional array type elements having high accuracy can be obtained.
JP15924779A 1979-12-10 1979-12-10 Manufacture of one dimentional array type element Pending JPS5683034A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15924779A JPS5683034A (en) 1979-12-10 1979-12-10 Manufacture of one dimentional array type element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15924779A JPS5683034A (en) 1979-12-10 1979-12-10 Manufacture of one dimentional array type element

Publications (1)

Publication Number Publication Date
JPS5683034A true JPS5683034A (en) 1981-07-07

Family

ID=15689561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15924779A Pending JPS5683034A (en) 1979-12-10 1979-12-10 Manufacture of one dimentional array type element

Country Status (1)

Country Link
JP (1) JPS5683034A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0742617A1 (en) * 1995-05-08 1996-11-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser and method of manufacturing the semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0742617A1 (en) * 1995-05-08 1996-11-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser and method of manufacturing the semiconductor laser
US5677922A (en) * 1995-05-08 1997-10-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser with crystalline window layer

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