JPS5677975A - Production of magnetic bubble element - Google Patents

Production of magnetic bubble element

Info

Publication number
JPS5677975A
JPS5677975A JP15382679A JP15382679A JPS5677975A JP S5677975 A JPS5677975 A JP S5677975A JP 15382679 A JP15382679 A JP 15382679A JP 15382679 A JP15382679 A JP 15382679A JP S5677975 A JPS5677975 A JP S5677975A
Authority
JP
Japan
Prior art keywords
ion
layer
approximate
density distribution
maximum density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15382679A
Other languages
Japanese (ja)
Inventor
Kazunari Yoneno
Makoto Ohashi
Tsutomu Miyashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15382679A priority Critical patent/JPS5677975A/en
Publication of JPS5677975A publication Critical patent/JPS5677975A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make the maximum density distribution of the ion injection layer approximate to the crystal surface, by forming a concatenated disk pattern on a magnetic bubble crystal substrate and then injecting the ion to the crystal substrate excepting the pattern via an insulated spacer.
CONSTITUTION: When the ion injecting 10 is given to the epitaxial (LPE) layer 2 obtained by the liquid-phase growth, the insulated spacer 4 is coated on the surface of the layer 2 before the ion injection in order to make the maximum density distribution of ion approximate to the crystal surface. As a result, the ion flying distance is reduced after going into the layer 2, and accordingly the ion injection layer 3 the maximum density distribution of which is made to approximate to the crystal surface can be obtained. As the spacer 4, there may be used suitably the SiO2, ZnS and the like, and the energy of the ion of H+, Ne+ or the like is consumed at this layer.
COPYRIGHT: (C)1981,JPO&Japio
JP15382679A 1979-11-28 1979-11-28 Production of magnetic bubble element Pending JPS5677975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15382679A JPS5677975A (en) 1979-11-28 1979-11-28 Production of magnetic bubble element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15382679A JPS5677975A (en) 1979-11-28 1979-11-28 Production of magnetic bubble element

Publications (1)

Publication Number Publication Date
JPS5677975A true JPS5677975A (en) 1981-06-26

Family

ID=15570927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15382679A Pending JPS5677975A (en) 1979-11-28 1979-11-28 Production of magnetic bubble element

Country Status (1)

Country Link
JP (1) JPS5677975A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5996594A (en) * 1982-11-25 1984-06-04 Nippon Telegr & Teleph Corp <Ntt> Manufacture of ion implantation type magnetic bubble device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5996594A (en) * 1982-11-25 1984-06-04 Nippon Telegr & Teleph Corp <Ntt> Manufacture of ion implantation type magnetic bubble device
JPS6153795B2 (en) * 1982-11-25 1986-11-19 Nippon Telegraph & Telephone

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