JPS567432A - Controlling method for low pressure of vacuum apparatus - Google Patents

Controlling method for low pressure of vacuum apparatus

Info

Publication number
JPS567432A
JPS567432A JP8205379A JP8205379A JPS567432A JP S567432 A JPS567432 A JP S567432A JP 8205379 A JP8205379 A JP 8205379A JP 8205379 A JP8205379 A JP 8205379A JP S567432 A JPS567432 A JP S567432A
Authority
JP
Japan
Prior art keywords
base body
pressure
vacuum vessel
anode
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8205379A
Other languages
Japanese (ja)
Inventor
Takashi Matsumoto
Masashi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP8205379A priority Critical patent/JPS567432A/en
Publication of JPS567432A publication Critical patent/JPS567432A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

PURPOSE:To return the pressure in a vacuum vessel to fixed pressure rapidly even when the pressure alters by a method wherein the number of revolution of vacuum pumps is changed in response to the variation of the discharging impedance of a spatter electrode or an etching electrode of the vacuum vessel. CONSTITUTION:A vacuum vessel 11 is provided with an introducing pip 12 to which a variable leaking valve for introducing etching gas is attached, and vacuum pumps 13, 14 for exhausting the gas are fitted. A base body 20 on which a pattern is placed and an anode 21 are attached into the vacuum vessel 11, the base body 20 is connected to a DC power source 22 or an AC power source 23, and the anode 21 is grounded. Meanwhile, a detector 24 is fitted between the base body 20 and the ground, and a varying portion of discharging impedance between the anode 21 and the base body 20 is detected by means of the detector 24. The detecting output is given to a comparator 25 in which the reference voltage is previously set, and the difference is amplified 27 and forwarded to a motor 28 of the pump 13 to control the number of revolution of the motor. Thus, pressure in the vessel 11 is kept constant within the desired range, and uniform etching is enabled at all times.
JP8205379A 1979-06-30 1979-06-30 Controlling method for low pressure of vacuum apparatus Pending JPS567432A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8205379A JPS567432A (en) 1979-06-30 1979-06-30 Controlling method for low pressure of vacuum apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8205379A JPS567432A (en) 1979-06-30 1979-06-30 Controlling method for low pressure of vacuum apparatus

Publications (1)

Publication Number Publication Date
JPS567432A true JPS567432A (en) 1981-01-26

Family

ID=13763762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8205379A Pending JPS567432A (en) 1979-06-30 1979-06-30 Controlling method for low pressure of vacuum apparatus

Country Status (1)

Country Link
JP (1) JPS567432A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6143426A (en) * 1984-08-08 1986-03-03 Ulvac Corp Pressure controlling device for vacuum processing device
US4949670A (en) * 1988-11-04 1990-08-21 Tegal Corporation Method and apparatus for low pressure plasma
US5415718A (en) * 1990-09-21 1995-05-16 Tadahiro Ohmi Reactive ion etching device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6143426A (en) * 1984-08-08 1986-03-03 Ulvac Corp Pressure controlling device for vacuum processing device
US4949670A (en) * 1988-11-04 1990-08-21 Tegal Corporation Method and apparatus for low pressure plasma
US5415718A (en) * 1990-09-21 1995-05-16 Tadahiro Ohmi Reactive ion etching device

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