JPS567304B2 - - Google Patents

Info

Publication number
JPS567304B2
JPS567304B2 JP8528872A JP8528872A JPS567304B2 JP S567304 B2 JPS567304 B2 JP S567304B2 JP 8528872 A JP8528872 A JP 8528872A JP 8528872 A JP8528872 A JP 8528872A JP S567304 B2 JPS567304 B2 JP S567304B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8528872A
Other versions
JPS4941067A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8528872A priority Critical patent/JPS567304B2/ja
Priority to US391820A priority patent/US3887993A/en
Publication of JPS4941067A publication Critical patent/JPS4941067A/ja
Publication of JPS567304B2 publication Critical patent/JPS567304B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/147—Silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP8528872A 1972-08-28 1972-08-28 Expired JPS567304B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8528872A JPS567304B2 (ja) 1972-08-28 1972-08-28
US391820A US3887993A (en) 1972-08-28 1973-08-27 Method of making an ohmic contact with a semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8528872A JPS567304B2 (ja) 1972-08-28 1972-08-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP56179480A Division JPS57111066A (en) 1981-11-09 1981-11-09 Semiconuctor device

Publications (2)

Publication Number Publication Date
JPS4941067A JPS4941067A (ja) 1974-04-17
JPS567304B2 true JPS567304B2 (ja) 1981-02-17

Family

ID=13854366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8528872A Expired JPS567304B2 (ja) 1972-08-28 1972-08-28

Country Status (2)

Country Link
US (1) US3887993A (ja)
JP (1) JPS567304B2 (ja)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49131585A (ja) * 1973-04-20 1974-12-17
JPS5121477A (ja) * 1974-08-15 1976-02-20 Nippon Electric Co Zetsuengeetogatahandotaisochi
US3975220A (en) * 1975-09-05 1976-08-17 International Business Machines Corporation Diffusion control for controlling parasitic capacitor effects in single FET structure arrays
JPS5388581A (en) * 1977-01-14 1978-08-04 Toshiba Corp Complementary type field effect transistor
NL7902247A (nl) * 1978-03-25 1979-09-27 Fujitsu Ltd Metaal-isolator-halfgeleidertype halfgeleiderinrich- ting en werkwijze voor het vervaardigen ervan.
JPS54161894A (en) * 1978-06-13 1979-12-21 Toshiba Corp Manufacture of semiconductor device
DE2855972C2 (de) * 1978-12-23 1984-09-27 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiteranordnung mit zwei integrierten und antiparallel geschalteten Dioden sowie Verfahren zu ihrer Herstellung
US4213807A (en) * 1979-04-20 1980-07-22 Rca Corporation Method of fabricating semiconductor devices
DE2926874A1 (de) * 1979-07-03 1981-01-22 Siemens Ag Verfahren zum herstellen von niederohmigen, diffundierten bereichen bei der silizium-gate-technologie
US4521800A (en) * 1982-10-15 1985-06-04 Standard Oil Company (Indiana) Multilayer photoelectrodes utilizing exotic materials
US4558507A (en) * 1982-11-12 1985-12-17 Nec Corporation Method of manufacturing semiconductor device
US4490193A (en) * 1983-09-29 1984-12-25 International Business Machines Corporation Method for making diffusions into a substrate and electrical connections thereto using rare earth boride materials
US4481046A (en) * 1983-09-29 1984-11-06 International Business Machines Corporation Method for making diffusions into a substrate and electrical connections thereto using silicon containing rare earth hexaboride materials
JPS6139516A (ja) * 1984-07-30 1986-02-25 Seiko Epson Corp 半導体装置の製造方法
US5059546A (en) * 1987-05-01 1991-10-22 Texas Instruments Incorporated BICMOS process for forming shallow NPN emitters and mosfet source/drains
US4816423A (en) * 1987-05-01 1989-03-28 Texas Instruments Incorporated Bicmos process for forming shallow npn emitters and mosfet source/drains
US4877748A (en) * 1987-05-01 1989-10-31 Texas Instruments Incorporated Bipolar process for forming shallow NPN emitters
US5200354A (en) * 1988-07-22 1993-04-06 Hyundai Electronics Industries Co. Ltd. Method for manufacturing dynamic random access memory cell
US5149672A (en) * 1988-08-01 1992-09-22 Nadia Lifshitz Process for fabricating integrated circuits having shallow junctions
US5182224A (en) * 1988-09-22 1993-01-26 Hyundai Electronics Industries Co., Ltd. Method of making dynamic random access memory cell having a SDHT structure
US4874713A (en) * 1989-05-01 1989-10-17 Ncr Corporation Method of making asymmetrically optimized CMOS field effect transistors
US5284793A (en) * 1989-11-10 1994-02-08 Kabushiki Kaisha Toshiba Method of manufacturing radiation resistant semiconductor device
US5011792A (en) * 1990-02-12 1991-04-30 At&T Bell Laboratories Method of making ohmic resistance WSb, contacts to III-V semiconductor materials
US5213999A (en) * 1990-09-04 1993-05-25 Delco Electronics Corporation Method of metal filled trench buried contacts
NL9100334A (nl) * 1991-02-26 1992-09-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een zelfregistrerend kobalt- of nikkel-silicide gevormd wordt.
JP3285934B2 (ja) * 1991-07-16 2002-05-27 株式会社東芝 半導体装置の製造方法
KR970009274B1 (ko) * 1991-11-11 1997-06-09 미쓰비시덴키 가부시키가이샤 반도체장치의 도전층접속구조 및 그 제조방법
US5252502A (en) * 1992-08-03 1993-10-12 Texas Instruments Incorporated Method of making MOS VLSI semiconductor device with metal gate
US5232873A (en) * 1992-10-13 1993-08-03 At&T Bell Laboratories Method of fabricating contacts for semiconductor devices
US5448095A (en) * 1993-12-20 1995-09-05 Eastman Kodak Company Semiconductors with protective layers
JP3514500B2 (ja) 1994-01-28 2004-03-31 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JPH08255907A (ja) * 1995-01-18 1996-10-01 Canon Inc 絶縁ゲート型トランジスタ及びその製造方法
EP0841690B1 (en) * 1996-11-12 2006-03-01 Samsung Electronics Co., Ltd. Tungsten nitride (WNx) layer manufacturing method and metal wiring manufacturing method
US6023081A (en) 1997-11-14 2000-02-08 Motorola, Inc. Semiconductor image sensor
KR100313510B1 (ko) * 1999-04-02 2001-11-07 김영환 반도체 소자의 제조방법
US7026229B2 (en) * 2001-11-28 2006-04-11 Vartan Semiconductor Equipment Associates, Inc. Athermal annealing with rapid thermal annealing system and method
JP2003188274A (ja) * 2001-12-19 2003-07-04 Toshiba Corp 半導体装置及びその製造方法
WO2005010975A1 (en) * 2003-06-24 2005-02-03 International Business Machines Corporation Planar magnetic tunnel junction substrate having recessed alignment marks

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3601888A (en) * 1969-04-25 1971-08-31 Gen Electric Semiconductor fabrication technique and devices formed thereby utilizing a doped metal conductor
US3646665A (en) * 1970-05-22 1972-03-07 Gen Electric Complementary mis-fet devices and method of fabrication
US3673679A (en) * 1970-12-01 1972-07-04 Texas Instruments Inc Complementary insulated gate field effect devices

Also Published As

Publication number Publication date
JPS4941067A (ja) 1974-04-17
US3887993A (en) 1975-06-10

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