JPS567293A - Memory - Google Patents

Memory

Info

Publication number
JPS567293A
JPS567293A JP6605380A JP6605380A JPS567293A JP S567293 A JPS567293 A JP S567293A JP 6605380 A JP6605380 A JP 6605380A JP 6605380 A JP6605380 A JP 6605380A JP S567293 A JPS567293 A JP S567293A
Authority
JP
Japan
Prior art keywords
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6605380A
Other languages
English (en)
Other versions
JPS5824876B2 (ja
Inventor
Haa Haimeiaa Herumiyuuto
Kurain Buirufuriido
Najiyuman Kunuto
Tsuee Buerunits Furiidoritsuhi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS567293A publication Critical patent/JPS567293A/ja
Publication of JPS5824876B2 publication Critical patent/JPS5824876B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP55066053A 1979-06-30 1980-05-20 メモリ Expired JPS5824876B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792926514 DE2926514A1 (de) 1979-06-30 1979-06-30 Elektrische speicheranordnung und verfahren zu ihrem betrieb

Publications (2)

Publication Number Publication Date
JPS567293A true JPS567293A (en) 1981-01-24
JPS5824876B2 JPS5824876B2 (ja) 1983-05-24

Family

ID=6074624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55066053A Expired JPS5824876B2 (ja) 1979-06-30 1980-05-20 メモリ

Country Status (5)

Country Link
US (1) US4313179A (ja)
EP (1) EP0020928B1 (ja)
JP (1) JPS5824876B2 (ja)
DE (2) DE2926514A1 (ja)
IT (1) IT1149977B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4731747A (en) * 1986-04-14 1988-03-15 American Telephone And Telegraph Company, At&T Bell Laboratories Highly parallel computation network with normalized speed of response
US4922455A (en) * 1987-09-08 1990-05-01 International Business Machines Corporation Memory cell with active device for saturation capacitance discharge prior to writing
EP0365730B1 (en) * 1988-10-28 1994-08-03 International Business Machines Corporation Double stage bipolar sense amplifier for BICMOS SRAMS with a common base amplifier in the final stage
JPH03116493A (ja) * 1989-09-28 1991-05-17 Toshiba Micro Electron Kk センスアンプ回路
KR100264075B1 (ko) * 1997-06-20 2000-08-16 김영환 전하 증폭 비트 라인 센스 앰프
US20100326085A1 (en) * 2009-06-25 2010-12-30 Veilleux Leo J Lightweight start system for a gas turbine engine

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3815106A (en) * 1972-05-11 1974-06-04 S Wiedmann Flip-flop memory cell arrangement
DE2021824C3 (de) * 1970-05-05 1980-08-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Halbleiterschaltung
US3765002A (en) * 1971-04-20 1973-10-09 Siemens Ag Accelerated bit-line discharge of a mosfet memory
DE2135625B1 (de) * 1971-07-16 1973-01-04 Ibm Deutschland Gmbh, 7000 Stuttgart Schaltungsanordnung zur automatischen Schreib-Unterdrückung
US3983412A (en) * 1975-07-02 1976-09-28 Fairchild Camera And Instrument Corporation Differential sense amplifier
DE2612666C2 (de) * 1976-03-25 1982-11-18 Ibm Deutschland Gmbh, 7000 Stuttgart Integrierte, invertierende logische Schaltung
GB1579386A (en) * 1976-07-22 1980-11-19 Tokyo Shibaura Electric Co Semiconductor memory device and method of manufacturing the same
DE2647394C2 (de) * 1976-10-20 1978-11-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen MOS-Halbleiterspeicherbaustein

Also Published As

Publication number Publication date
US4313179A (en) 1982-01-26
EP0020928B1 (de) 1983-07-20
EP0020928A1 (de) 1981-01-07
DE3064212D1 (en) 1983-08-25
DE2926514A1 (de) 1981-01-15
IT1149977B (it) 1986-12-10
IT8022716A0 (it) 1980-06-11
JPS5824876B2 (ja) 1983-05-24

Similar Documents

Publication Publication Date Title
DE3071923D1 (en) Memory device
GB2060632B (en) Imidazodiazepines
JPS558696A (en) Nonnvolatile memory
JPS55153133A (en) Optical memory
EP0031257A3 (en) Pyridylanilines
JPS5621068A (en) Waveform memory
GB2051537B (en) Cloches
JPS5552274A (en) Nonnvolatile memory
JPS5593588A (en) Memory array
GB2073987B (en) Memory table
DE3068493D1 (en) Memory device
GB2058752B (en) N-propionylsarcosineanilides
JPS5667888A (en) Imageehandling memory unit
GB2046963B (en) Control memory
GB2058073B (en) 8-aminoalkyl-4-alkylpsoralens
JPS54142925A (en) Memory
JPS5694581A (en) Memory array
DE3070140D1 (en) Memory device
JPS55129387A (en) Memory element
GB2056209B (en) Memory device
JPS567292A (en) Dsemiconductor memory
JPS5683884A (en) Multiiaccess memory
JPS55127686A (en) Time memory unit
GB2054591B (en) Cleomycins
JPS55143074A (en) Rewritable readdonly memory