JPS5672320A - Temperature measuring device - Google Patents

Temperature measuring device

Info

Publication number
JPS5672320A
JPS5672320A JP15018279A JP15018279A JPS5672320A JP S5672320 A JPS5672320 A JP S5672320A JP 15018279 A JP15018279 A JP 15018279A JP 15018279 A JP15018279 A JP 15018279A JP S5672320 A JPS5672320 A JP S5672320A
Authority
JP
Japan
Prior art keywords
voltage
thyristor
temperature
heat
voltmeter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15018279A
Other languages
Japanese (ja)
Inventor
Yoshio Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15018279A priority Critical patent/JPS5672320A/en
Publication of JPS5672320A publication Critical patent/JPS5672320A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

PURPOSE:To enable to use an indicating lamp as well as an ammeter or a voltmeter, by applying a heat sensitive thyristor to which a voltage having a rise below the increasing rate of critical voltage between the anode and the cathode is given. CONSTITUTION:A gate resistance 5 is set to a prescribed value and the temperature of a heat-sensitive thyristor 1 is made equal to the temperature of the substance, by causing the heat-sensitive thyristor 1 to contact to the substance. When a voltage of right-angled triangle shape is fed between the anode and the cathode of the thyristor 1 through a load resistance 3 from a power supply 2, the thyristor 1 turns on with a switching voltage corresponding to the temperature to produce a trapezoidal voltage across the load resistance 3. The average value of this trapezoidal voltage is indicated on a DC voltmeter 4. By reading the indication of the DC voltmeter 4, the temperature of the heat-sensitive thyristor 1, that is, that of the substance can be measured.
JP15018279A 1979-11-19 1979-11-19 Temperature measuring device Pending JPS5672320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15018279A JPS5672320A (en) 1979-11-19 1979-11-19 Temperature measuring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15018279A JPS5672320A (en) 1979-11-19 1979-11-19 Temperature measuring device

Publications (1)

Publication Number Publication Date
JPS5672320A true JPS5672320A (en) 1981-06-16

Family

ID=15491292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15018279A Pending JPS5672320A (en) 1979-11-19 1979-11-19 Temperature measuring device

Country Status (1)

Country Link
JP (1) JPS5672320A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102901575A (en) * 2012-10-25 2013-01-30 上海宏力半导体制造有限公司 Temperature measuring method for semiconductor device manufactured based on CMOS (Complementary Metal Oxide Semiconductor) process
CN102928103A (en) * 2012-10-25 2013-02-13 上海宏力半导体制造有限公司 Temperature measuring method for semiconductor device made on the basis of LDMOS (Laterally Diffused Metal Oxide Semiconductor) process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102901575A (en) * 2012-10-25 2013-01-30 上海宏力半导体制造有限公司 Temperature measuring method for semiconductor device manufactured based on CMOS (Complementary Metal Oxide Semiconductor) process
CN102928103A (en) * 2012-10-25 2013-02-13 上海宏力半导体制造有限公司 Temperature measuring method for semiconductor device made on the basis of LDMOS (Laterally Diffused Metal Oxide Semiconductor) process

Similar Documents

Publication Publication Date Title
ES462965A1 (en) Device for checking the level of a liquid in a tank
ES2080893T3 (en) BATTERY THAT HAS A LABEL THAT INCLUDES A VOLTMETER.
EP0223343A3 (en) Time integral indicator device of a monitored parameter
DK508677A (en) ELECTRICAL SOCKET WITH INDICATOR FOR FAILING OR LOW VOLTAGE
JPS5672320A (en) Temperature measuring device
ES8605109A1 (en) Measuring probe for determining the formation of ice or snow.
JPS5337077A (en) Probe for tester
JPS51148836A (en) Uniformly heating device for material s whose electric resistance has netative temperature coefficient
JPS5587941A (en) Humidity sensor
ATE29926T1 (en) TIME-TEMPERATURE INDICATOR.
JPS57154069A (en) Measuring device for electric resistance
JPS5510517A (en) Defect detector by heating
JPS56153224A (en) Electronic clinical thermometer
JPS5672366A (en) Measuring device of holding current of thyristor
JPS5576960A (en) Method of measuring low grounding resistance
JPS5229777A (en) Small-size measuring instrument
JPS5216628A (en) Dc current transformer
JPS5384685A (en) Semicocductor element measuring method
JPS538067A (en) Measuring circuit of turn-of thyristor
JPS5547402A (en) Measuring instrument for surface area of metallic material
JPS57175947A (en) Predicting method for residual life of high temperature part against breakage
JPS57124249A (en) Method and apparatus for measuring interfacial dynamic electricity phenomenon
JPS5661609A (en) Voltmeter of ammeter with instantaneous max./min. value pointer
JPS57131073A (en) Device for measuring resistance distribution of transparent conducting film of instantaneously lighting type fluorescent lamp
JPS52113294A (en) Detecting element of halogen gas