JPS5663807A - Manufacture of silicon nitride powder - Google Patents
Manufacture of silicon nitride powderInfo
- Publication number
- JPS5663807A JPS5663807A JP13887279A JP13887279A JPS5663807A JP S5663807 A JPS5663807 A JP S5663807A JP 13887279 A JP13887279 A JP 13887279A JP 13887279 A JP13887279 A JP 13887279A JP S5663807 A JPS5663807 A JP S5663807A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- aggregate
- gas
- manufacture
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0682—Preparation by direct nitridation of silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
PURPOSE: To manufacture α-type Si3N4 powder contg. little Si2N2O by coating an Si powder aggregate to be nitrided with powder of Al4C3, AlN or the like, gradually feeding a nitriding gas into the aggregate through the coated body, and heating the aggregate.
CONSTITUTION: An aggregate of Si powder or mixed powder consisting essentially of Si power is filled into a crucible made of Si3N4 or other material. After coating the surface of the aggregate with a powder layer of Al4C3, AlN or the like the aggregate is heated in a furnace while gradually feeding a nitriding gas into the Si powder through the powder layer. This nitriding treatment is carried out in H2 gas or a vacuum at 1,200W1,400, preferably 1,250W1,350°C. As the nitriding gas a cracked gas such as N2 gas or NH3 is suitably used. The resulting α-type Si3N4 powder of high purity is sintered together with MgO as a sintering accelerator to obtain a silicon nitride sintered body with very high strength at high temp.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13887279A JPS5663807A (en) | 1979-10-26 | 1979-10-26 | Manufacture of silicon nitride powder |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13887279A JPS5663807A (en) | 1979-10-26 | 1979-10-26 | Manufacture of silicon nitride powder |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5663807A true JPS5663807A (en) | 1981-05-30 |
JPS6110403B2 JPS6110403B2 (en) | 1986-03-29 |
Family
ID=15232076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13887279A Granted JPS5663807A (en) | 1979-10-26 | 1979-10-26 | Manufacture of silicon nitride powder |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5663807A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5888107A (en) * | 1981-11-16 | 1983-05-26 | Denki Kagaku Kogyo Kk | Continuous preparation of alpha-type silicon nitride |
CN111364104A (en) * | 2020-04-23 | 2020-07-03 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Preparation method of high-purity raw material for aluminum nitride single crystal growth |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63254348A (en) * | 1987-04-10 | 1988-10-21 | Asahi Glass Co Ltd | Fluid heating device |
-
1979
- 1979-10-26 JP JP13887279A patent/JPS5663807A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5888107A (en) * | 1981-11-16 | 1983-05-26 | Denki Kagaku Kogyo Kk | Continuous preparation of alpha-type silicon nitride |
JPH028964B2 (en) * | 1981-11-16 | 1990-02-28 | Denki Kagaku Kogyo Kk | |
CN111364104A (en) * | 2020-04-23 | 2020-07-03 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Preparation method of high-purity raw material for aluminum nitride single crystal growth |
Also Published As
Publication number | Publication date |
---|---|
JPS6110403B2 (en) | 1986-03-29 |
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