JPS5663799A - Ion source - Google Patents

Ion source

Info

Publication number
JPS5663799A
JPS5663799A JP13767679A JP13767679A JPS5663799A JP S5663799 A JPS5663799 A JP S5663799A JP 13767679 A JP13767679 A JP 13767679A JP 13767679 A JP13767679 A JP 13767679A JP S5663799 A JPS5663799 A JP S5663799A
Authority
JP
Japan
Prior art keywords
ion source
ion
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13767679A
Other languages
Japanese (ja)
Inventor
Tadashi Satou
Hidetomo Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13767679A priority Critical patent/JPS5663799A/en
Publication of JPS5663799A publication Critical patent/JPS5663799A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
JP13767679A 1979-10-26 1979-10-26 Ion source Pending JPS5663799A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13767679A JPS5663799A (en) 1979-10-26 1979-10-26 Ion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13767679A JPS5663799A (en) 1979-10-26 1979-10-26 Ion source

Publications (1)

Publication Number Publication Date
JPS5663799A true JPS5663799A (en) 1981-05-30

Family

ID=15204206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13767679A Pending JPS5663799A (en) 1979-10-26 1979-10-26 Ion source

Country Status (1)

Country Link
JP (1) JPS5663799A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113539A (en) * 1980-12-24 1982-07-15 Ibm High temperature multipole plasma ion beam source
JPS57185653A (en) * 1981-05-11 1982-11-15 Toshiba Corp Ion-source device
JPS60258839A (en) * 1984-06-06 1985-12-20 Hitachi Ltd Ion beam apparatus
US4767931A (en) * 1986-12-17 1988-08-30 Hitachi, Ltd. Ion beam apparatus
JPS6424338A (en) * 1987-07-17 1989-01-26 Nissin Electric Co Ltd Ion source

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494282A (en) * 1977-12-30 1979-07-25 Ibm Negative ion extractor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494282A (en) * 1977-12-30 1979-07-25 Ibm Negative ion extractor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113539A (en) * 1980-12-24 1982-07-15 Ibm High temperature multipole plasma ion beam source
JPS57185653A (en) * 1981-05-11 1982-11-15 Toshiba Corp Ion-source device
JPS60258839A (en) * 1984-06-06 1985-12-20 Hitachi Ltd Ion beam apparatus
US4767931A (en) * 1986-12-17 1988-08-30 Hitachi, Ltd. Ion beam apparatus
JPS6424338A (en) * 1987-07-17 1989-01-26 Nissin Electric Co Ltd Ion source

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