JPS5656634A - Setting method of wafer to exposure room - Google Patents

Setting method of wafer to exposure room

Info

Publication number
JPS5656634A
JPS5656634A JP13341879A JP13341879A JPS5656634A JP S5656634 A JPS5656634 A JP S5656634A JP 13341879 A JP13341879 A JP 13341879A JP 13341879 A JP13341879 A JP 13341879A JP S5656634 A JPS5656634 A JP S5656634A
Authority
JP
Japan
Prior art keywords
wafer
locating
pattern
preliminary
marks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13341879A
Other languages
Japanese (ja)
Inventor
Hitoshi Takemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK filed Critical Jeol Ltd
Priority to JP13341879A priority Critical patent/JPS5656634A/en
Publication of JPS5656634A publication Critical patent/JPS5656634A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a high precision exposure in a short time by a method wherein a guide mark on a wafer is projected on a monitor TV to preliminary locating, and then a particle beam is irradiated to draw a pattern. CONSTITUTION:Marks m1 and m2 are put beforehand on a wafer, which is placed on a base 2' at a given position. The light from wafer 3' comes into a camera 10 through mirrors 11, 14 and 12, 13, which is given on a picture of monitor TV9. Where spots C1, C2 of the picture and the marks m1, m2 do not overlap each other, a motor 17 (X, Y directions) and a motor 18 (turning direction) are driven 20 for coincidence. After preliminary locating, the wafer is set in an exposure room 1 at a given position through linear movement as specified. Next, a precise locating is performed and the drawing of a pattern is commenced. While the pattern is drawn, a preliminary locating of the next wafer is carried out. According to this constitution, the precise locating becomes easy, precision is improved and working hours can be reduced in addition.
JP13341879A 1979-10-16 1979-10-16 Setting method of wafer to exposure room Pending JPS5656634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13341879A JPS5656634A (en) 1979-10-16 1979-10-16 Setting method of wafer to exposure room

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13341879A JPS5656634A (en) 1979-10-16 1979-10-16 Setting method of wafer to exposure room

Publications (1)

Publication Number Publication Date
JPS5656634A true JPS5656634A (en) 1981-05-18

Family

ID=15104301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13341879A Pending JPS5656634A (en) 1979-10-16 1979-10-16 Setting method of wafer to exposure room

Country Status (1)

Country Link
JP (1) JPS5656634A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62299029A (en) * 1986-06-18 1987-12-26 Fujitsu Ltd Aligner
JP2000223397A (en) * 1999-01-29 2000-08-11 Nec Corp Method and apparatus for electron beam exposure
JP2003068243A (en) * 2001-08-28 2003-03-07 Hitachi Ltd Ion milling device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62299029A (en) * 1986-06-18 1987-12-26 Fujitsu Ltd Aligner
JP2000223397A (en) * 1999-01-29 2000-08-11 Nec Corp Method and apparatus for electron beam exposure
JP2003068243A (en) * 2001-08-28 2003-03-07 Hitachi Ltd Ion milling device

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