JPS5654076A - Detector for semiconductor radioactive ray - Google Patents

Detector for semiconductor radioactive ray

Info

Publication number
JPS5654076A
JPS5654076A JP13068879A JP13068879A JPS5654076A JP S5654076 A JPS5654076 A JP S5654076A JP 13068879 A JP13068879 A JP 13068879A JP 13068879 A JP13068879 A JP 13068879A JP S5654076 A JPS5654076 A JP S5654076A
Authority
JP
Japan
Prior art keywords
electrodes
mount
insulating plate
positive
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13068879A
Other languages
Japanese (ja)
Inventor
Yujiro Naruse
Toru Sugita
Tetsuji Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13068879A priority Critical patent/JPS5654076A/en
Publication of JPS5654076A publication Critical patent/JPS5654076A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
    • H01L31/1185—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors of the shallow PN junction detector type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • X-Ray Techniques (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)

Abstract

PURPOSE:To arrest magnetic noises caused by an external magnetic field by a method wherein when positive and negative electrodes of a semiconductor radioactive rays detecting element which is fitted on a mount are connected to a sense circuit using a conductive film, the conductive film is wound in spiral on the surface of an insulating plate which is connected to the mount. CONSTITUTION:A semiconductor radioactive rays detecting element 31 provided with positive and negative electrodes on both sides of the surface and the reverse is fitted on a mount 32 shaped approximately in ring which is integratedly formed with an insulating plate 33 for leading out the electrodes. In the following, electrodes outgoing lines 341 and 342 respectively in positive and negative are connected to the electrodes of the element 31 and led out along the insulating plate 33 to a sense circuit provided outside. In this case, an Al film of less than 40mum thick is used for the outgoing lines 341 and 342 and wound in spiral. Materials which are small in X-ray attenuation, such as acrylic resin or polyester resin, is used for the mount 32 and the insulating plate 33. In such a manner, when the materials are used for an X-ray exposure control device, no shadow is produced on the film.
JP13068879A 1979-10-09 1979-10-09 Detector for semiconductor radioactive ray Pending JPS5654076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13068879A JPS5654076A (en) 1979-10-09 1979-10-09 Detector for semiconductor radioactive ray

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13068879A JPS5654076A (en) 1979-10-09 1979-10-09 Detector for semiconductor radioactive ray

Publications (1)

Publication Number Publication Date
JPS5654076A true JPS5654076A (en) 1981-05-13

Family

ID=15040235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13068879A Pending JPS5654076A (en) 1979-10-09 1979-10-09 Detector for semiconductor radioactive ray

Country Status (1)

Country Link
JP (1) JPS5654076A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03150392A (en) * 1989-09-05 1991-06-26 General Electric Co <Ge> Preparation of metal coated polyimide composite

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03150392A (en) * 1989-09-05 1991-06-26 General Electric Co <Ge> Preparation of metal coated polyimide composite

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