JPS5651826A - Image drawing apparatus by electron beam - Google Patents

Image drawing apparatus by electron beam

Info

Publication number
JPS5651826A
JPS5651826A JP12793479A JP12793479A JPS5651826A JP S5651826 A JPS5651826 A JP S5651826A JP 12793479 A JP12793479 A JP 12793479A JP 12793479 A JP12793479 A JP 12793479A JP S5651826 A JPS5651826 A JP S5651826A
Authority
JP
Japan
Prior art keywords
sample
electron
deltah
reference plane
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12793479A
Other languages
Japanese (ja)
Inventor
Kazumitsu Nakamura
Soichiro Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12793479A priority Critical patent/JPS5651826A/en
Publication of JPS5651826A publication Critical patent/JPS5651826A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To eliminate an uneven image drawing due to a wavy surface of a sample by detecting the height variation of the sample surface, converting it into an electrical signal, and controlling the focal length of electron lenses according to the signal. CONSTITUTION:The electron beam radiated from an electron gun 1 is passed through the openings in plates 2 and 5 and electron lenses 3 and 6, and converged on a sample 7. Supposing that the surface of the sample 7, which is imaginarily divided into small sectional regions, is positioned at a reference plane, and the small sectional region to be lithographed is deviated from the reference plane by a height DELTAH. The DELTAH is obtained from a coordinate-measuring system consisting of a laser interferometer 26, detector 21, mark signal generator 22 and computer 10. An electrical signal representing the height variation DELTAH is generated from the computer 10. According to the signal, an correcting current from a correcting current generating and holding circuit 25 is applied to a correcting electron lens 27. This permits the cross section of the electron beam at the small sectional region to be equal in size to that at the reference plane.
JP12793479A 1979-10-05 1979-10-05 Image drawing apparatus by electron beam Pending JPS5651826A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12793479A JPS5651826A (en) 1979-10-05 1979-10-05 Image drawing apparatus by electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12793479A JPS5651826A (en) 1979-10-05 1979-10-05 Image drawing apparatus by electron beam

Publications (1)

Publication Number Publication Date
JPS5651826A true JPS5651826A (en) 1981-05-09

Family

ID=14972241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12793479A Pending JPS5651826A (en) 1979-10-05 1979-10-05 Image drawing apparatus by electron beam

Country Status (1)

Country Link
JP (1) JPS5651826A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145122A (en) * 1982-02-23 1983-08-29 Jeol Ltd Electron beam exposure device
FR2554223A1 (en) * 1983-10-28 1985-05-03 Control Data Corp CAPACITY HEIGHT GAUGE AND METHOD AND APPARATUS FOR CALIBRATING SAID GAUGE

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145122A (en) * 1982-02-23 1983-08-29 Jeol Ltd Electron beam exposure device
FR2554223A1 (en) * 1983-10-28 1985-05-03 Control Data Corp CAPACITY HEIGHT GAUGE AND METHOD AND APPARATUS FOR CALIBRATING SAID GAUGE

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