JPS5650628A - Driving circuit of thyristor - Google Patents

Driving circuit of thyristor

Info

Publication number
JPS5650628A
JPS5650628A JP12668079A JP12668079A JPS5650628A JP S5650628 A JPS5650628 A JP S5650628A JP 12668079 A JP12668079 A JP 12668079A JP 12668079 A JP12668079 A JP 12668079A JP S5650628 A JPS5650628 A JP S5650628A
Authority
JP
Japan
Prior art keywords
inductance
negative direction
resonance frequency
gate
pulse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12668079A
Other languages
Japanese (ja)
Other versions
JPS643373B2 (en
Inventor
Tamon Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP12668079A priority Critical patent/JPS5650628A/en
Publication of JPS5650628A publication Critical patent/JPS5650628A/en
Publication of JPS643373B2 publication Critical patent/JPS643373B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To reduce the driving electric power with no loss, by securing a higher resonance frequency of the 1st resonance circuit than the 2nd resonance frequency. CONSTITUTION:The pulse is applied to the terminal 16 with the transistor TR15 turned on. In such case, only the leak inductance is secured substantially when the pulse transformer 13 is expected from the secondary side. As the leak inductance has a dense coupling, the gate current IG flows into the gate of the GCS1. And a ringing having a sharp rise is produced to the current IG since the leak inductance and the capacitor 18 form a resonance circuit. The cycle of the ringing is set to 1/10 or less of the pulse cycle T of the terminal 16. In the off-section of the TR15, the inductance expected from the secondary side becomes identical to the inductance of the secondary coil 14b. This inductance resonates with the capacitors 18 and 19 to increase the gate voltage VG in the negative direction and thus prevent the turning-on of the GCS1. Then the resonance frequency is selected so that the bias in the negative direction may become deep. As a result, a large gate current is not required during on and a deep bias is secured in the negative direction during off each. Thus the electric power can be reduced without increasing the loss.
JP12668079A 1979-10-01 1979-10-01 Driving circuit of thyristor Granted JPS5650628A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12668079A JPS5650628A (en) 1979-10-01 1979-10-01 Driving circuit of thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12668079A JPS5650628A (en) 1979-10-01 1979-10-01 Driving circuit of thyristor

Publications (2)

Publication Number Publication Date
JPS5650628A true JPS5650628A (en) 1981-05-07
JPS643373B2 JPS643373B2 (en) 1989-01-20

Family

ID=14941188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12668079A Granted JPS5650628A (en) 1979-10-01 1979-10-01 Driving circuit of thyristor

Country Status (1)

Country Link
JP (1) JPS5650628A (en)

Also Published As

Publication number Publication date
JPS643373B2 (en) 1989-01-20

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