SU744985A1 - Transistorized switch - Google Patents

Description

(54) TRANSISTOR KEY

The invention relates to the field of converter technology and can be used as a power switch in converter devices for various purposes. A transistor switch containing a matching transformer is known, the output winding of which is connected via a base diode to a control junction of the transistor, as well as a nonlinear feedback diode connected between the collector of the transistor and the additional bias source l. Also known is a transistor switch containing a matching transformer, the output winding of which through a limiting resistor and base diode is connected to the control junction of the transistor, as well as a nonlinear-feedback coupling diode connected between the collector of the transistor and one of the terminals of the basic C2 cable. Well-known transistor switches have none: 1Second efficiency and narrow functionality. The purpose of the invention is to increase the efficiency and expand the power supply. The goal is achieved in that a transistor key containing a matching transformer, the output winding of which .h & cut limiting resistor and base diode is connected to the control junction of the transistor, as well as a nonlinear feedback diode connected between the collector of the transistor and one of the terminals of the base 1Aiod , a variable resistor and a controlled saturation inductor are introduced, the primary winding of which is connected in series with the nonlinear feedback diode, and the secondary winding is connected to the output winding of uyuschetch transformer via a variable resistor. FIG. 1 shows the basic “electrical transistor circuit.

The key contains an agreement; -transform 1, limiting b, azovy resistor 2, nonlinear feedback diode 3, 6a "zyd daod 4, transistor 5, load resistor 6, choke 7, variable variable resistor 8"

In FIG. 2 a b, in the future, the temporal log of TpaHsifCTopJoro,

Trapzigorgay key works cneoyio SCHEME way.

Suppose that it is enough time to Sfkg. 2) the core of the throttle saturation due to the action of the winding according to

, CB COCTOSSHHH O1rIiaT8L, LNA

colony I-rig), Tdc- Bg HHajTfKira on syngenk of heart material At the moment -I, -. on the secondary winding of the transformer 1, a control junction tjj appears, with the polarity indicated on f5P, 1. without brackets. Frequency 5 on inet from El-Yarats and through time -i. f, led-.isha. which is determined by the characteristics of the transient properties, is transferred to the saturation state. From the moment t, the core of the throttles of the passa ™ and its zhg from the state of -Bq to the state

-%

On Youngerale Peremagnichszhy -1

{FIG. 2.6) the inductive resistance is wound up: W droplet futs of all harmonics BHOYRKY TONI 1: / aocha Jo., great, n in the di-

I-,

Ode 3. The current is magnetized; the heart of the ginka, having a very small Herg; At the same time, the circuit of nonlinear rational automatic reverse current turns out to be K51, at least, current bypass; 5 transistor is equal to gokhodomu (fng, 2gb), and transistor 5 supports-hSZ in the nypienkgg, nz pryalshme same, more between em1tx, rum and collector srpisistor S is equal to and. (fkg, 2, c).

Throttle parameters 7 saturation of N5 branes so that the time of its magnetization reversal is (k). Into the -J-Bg state a little less than the length of the worm from the pirated pulse (Fig. 2.6), at the time point -t heart throttle 7 is gone, the inductive resistance of the windings drops sharply, the smart feedback 3 is unlocked and starts act as a chain of electric cordless / gripping current coupling. As a result of the effect of the reverse bias voltage, the base current of the transistor 5 xmen.shats to led is 1 m Jr C of FIG. 2,6), and the working .. transistor is in active region on Granin saturating. In this case, the ratio between the emitter and the complex

the rum of the transistor 5 increases to (fng. 2, .b).

in the time base, thanks to the 5J de fi ning of the SETR of the inverse of the current, the current of the base of the transistor S, is automatically maintained, such that the throttling zone is close to the active domain boundary. In this case, the difference is w 1 of one, and the base Jg of the currents flows in p.eai and dcor 3 not by the feedback line Io-j -f & jf

In the so-called 1-1MV scheme, find C to the moment of ins,. When the base of the transinvator is 5 p. &Amp; 1 cc), you can use the CGF, 1 and the brackets KfK. So K8Jf. As a result, reverse the transistor 5 to my tape & Menstruation of Lac Nakhod from Igrakitsa Gaoygydetsi then, upon the occurrence of a blocking signal, a decrease in the collector current will begin; At the same moment vret.ge and. As a result of this switching off, the transistor 5 is reduced in proportion to the saturated work, in which the moment of the beginning of the decrease in the collector current is preceded by the interlacing & nous minor ifocHT © in the database.

After the transistor S of the transistor S, the core of the intersection of the core is 7: with the help of the crank pormangngkwiii Wn, the crankshaft transforms from the state KIA iB into the state -Bq J prepares Bggi; .Ban core to the next next pulse. The MEKHbifi resistor 8 serves to regulate the magnitude of the current of the jumper current, and, therefore, the reg-plane of the core.

The presence of throttles is saturated in the non-linear negative current feedback circuit of npKBOji.HT to the fact that during the first part of the willow; it was tearing open)) 1.x of the transistor, it is removed in the deep filling mode, and only before the filling pulse (interval, y) with the help of a positive feedback perezhd.1ddtsa and the boundary to a saturated mode, therefore, the loss .. of the public key is much less than in the prototype, due to the CWD key. ,

The turn-off time of the transistor, in the proposed circuit, as in the prototype circuit is less, than in the circuits: passive keys. Last thing. In the case of such keys in the MOCIX inverter circuits, the t-elness is special, which means that the transistor has a significant J resorption time, E leads to a very high throughput current reducing the efficiency and reliability of the inverter.

Claims (2)

1. USSR author's certificate No. 215265, cl. N OZ K 17 / 6O 03/04/68 (equivalent). 2.Sidorov A. S. Diode and transistor switches. M., Svy, 1975, p. 53, fig. 213 V (prototype). ABOUT 1