JPS5648480B2 - - Google Patents
Info
- Publication number
- JPS5648480B2 JPS5648480B2 JP7392277A JP7392277A JPS5648480B2 JP S5648480 B2 JPS5648480 B2 JP S5648480B2 JP 7392277 A JP7392277 A JP 7392277A JP 7392277 A JP7392277 A JP 7392277A JP S5648480 B2 JPS5648480 B2 JP S5648480B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69946076A | 1976-06-24 | 1976-06-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS535100A JPS535100A (en) | 1978-01-18 |
| JPS5648480B2 true JPS5648480B2 (th) | 1981-11-16 |
Family
ID=24809427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7392277A Granted JPS535100A (en) | 1976-06-24 | 1977-06-23 | Method of making single crystal gadlinium gallium |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS535100A (th) |
| CA (1) | CA1080589A (th) |
| CH (1) | CH603236A5 (th) |
| DE (1) | DE2728314C3 (th) |
| FR (1) | FR2355560A1 (th) |
| GB (1) | GB1565407A (th) |
| NL (1) | NL187587C (th) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS646210Y2 (th) * | 1983-03-07 | 1989-02-16 | ||
| JPH0540939Y2 (th) * | 1986-04-04 | 1993-10-18 | ||
| CN104313693A (zh) * | 2014-09-19 | 2015-01-28 | 北京雷生强式科技有限责任公司 | 掺杂钇铝石榴石激光晶体的生长装置、晶体生长炉及制备方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2047113B (en) * | 1979-04-12 | 1983-08-03 | Union Carbide Corp | Method for producing gadolinium gallium garnet |
| US4443411A (en) * | 1980-12-15 | 1984-04-17 | Mobil Solar Energy Corporation | Apparatus for controlling the atmosphere surrounding a crystal growth zone |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2434251C2 (de) * | 1974-07-17 | 1982-08-26 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Einkristall auf der Basis von Gallium- Granat |
-
1977
- 1977-06-17 CA CA280,811A patent/CA1080589A/en not_active Expired
- 1977-06-23 GB GB26303/77A patent/GB1565407A/en not_active Expired
- 1977-06-23 CH CH773077A patent/CH603236A5/xx not_active IP Right Cessation
- 1977-06-23 JP JP7392277A patent/JPS535100A/ja active Granted
- 1977-06-23 FR FR7719290A patent/FR2355560A1/fr active Granted
- 1977-06-23 NL NLAANVRAGE7706980,A patent/NL187587C/xx not_active IP Right Cessation
- 1977-06-23 DE DE2728314A patent/DE2728314C3/de not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS646210Y2 (th) * | 1983-03-07 | 1989-02-16 | ||
| JPH0540939Y2 (th) * | 1986-04-04 | 1993-10-18 | ||
| CN104313693A (zh) * | 2014-09-19 | 2015-01-28 | 北京雷生强式科技有限责任公司 | 掺杂钇铝石榴石激光晶体的生长装置、晶体生长炉及制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2728314B2 (de) | 1981-05-07 |
| FR2355560A1 (fr) | 1978-01-20 |
| CH603236A5 (th) | 1978-08-15 |
| GB1565407A (en) | 1980-04-23 |
| NL187587C (nl) | 1991-11-18 |
| FR2355560B1 (th) | 1983-01-21 |
| JPS535100A (en) | 1978-01-18 |
| NL187587B (nl) | 1991-06-17 |
| DE2728314A1 (de) | 1978-02-02 |
| CA1080589A (en) | 1980-07-01 |
| DE2728314C3 (de) | 1982-03-25 |
| NL7706980A (nl) | 1977-12-28 |