JPS5643664B2 - - Google Patents

Info

Publication number
JPS5643664B2
JPS5643664B2 JP1427777A JP1427777A JPS5643664B2 JP S5643664 B2 JPS5643664 B2 JP S5643664B2 JP 1427777 A JP1427777 A JP 1427777A JP 1427777 A JP1427777 A JP 1427777A JP S5643664 B2 JPS5643664 B2 JP S5643664B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1427777A
Other languages
Japanese (ja)
Other versions
JPS5399879A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1427777A priority Critical patent/JPS5399879A/ja
Publication of JPS5399879A publication Critical patent/JPS5399879A/ja
Publication of JPS5643664B2 publication Critical patent/JPS5643664B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066Gate region of field-effect devices with PN junction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP1427777A 1977-02-14 1977-02-14 Junction-type field effect thyristor Granted JPS5399879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1427777A JPS5399879A (en) 1977-02-14 1977-02-14 Junction-type field effect thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1427777A JPS5399879A (en) 1977-02-14 1977-02-14 Junction-type field effect thyristor

Publications (2)

Publication Number Publication Date
JPS5399879A JPS5399879A (en) 1978-08-31
JPS5643664B2 true JPS5643664B2 (US06521211-20030218-C00004.png) 1981-10-14

Family

ID=11856583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1427777A Granted JPS5399879A (en) 1977-02-14 1977-02-14 Junction-type field effect thyristor

Country Status (1)

Country Link
JP (1) JPS5399879A (US06521211-20030218-C00004.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0319465Y2 (US06521211-20030218-C00004.png) * 1985-01-05 1991-04-24

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562667A (en) * 1979-06-20 1981-01-12 Hitachi Ltd Semiconductor device and manufacture thereof
JPS56160245A (en) * 1980-05-15 1981-12-09 Honda Motor Co Ltd Antiskid braking control method
JPS6015097Y2 (ja) * 1980-06-04 1985-05-13 富士電機株式会社 製氷機
JPS5788771A (en) * 1980-11-21 1982-06-02 Semiconductor Res Found Electrostatic induction thyristor
JPS62117370A (ja) * 1985-11-15 1987-05-28 Semiconductor Res Found ダブルゲ−ト静電誘導サイリスタの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0319465Y2 (US06521211-20030218-C00004.png) * 1985-01-05 1991-04-24

Also Published As

Publication number Publication date
JPS5399879A (en) 1978-08-31

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