JPS564069A - Test of semiconductor device - Google Patents

Test of semiconductor device

Info

Publication number
JPS564069A
JPS564069A JP7987679A JP7987679A JPS564069A JP S564069 A JPS564069 A JP S564069A JP 7987679 A JP7987679 A JP 7987679A JP 7987679 A JP7987679 A JP 7987679A JP S564069 A JPS564069 A JP S564069A
Authority
JP
Japan
Prior art keywords
vibration
semiconductor device
radiation fin
heat
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7987679A
Other languages
Japanese (ja)
Inventor
Hirota Makino
Kazutoshi Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7987679A priority Critical patent/JPS564069A/en
Publication of JPS564069A publication Critical patent/JPS564069A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE: To accomplish reliability test quickly by allowing the simultaneous testing of the heat and vibration stress at the mount part of the semiconductor device with the radiation fin with the application of vibration, feeding a given voltage to the semiconductor device with radiation fin.
CONSTITUTION: The semiconductor device 1 with radiation fin is fixed on the base 5 of the vibration tester and each lead 6 is connected to the external leads 2 and 2 of the device 1 to apply a given voltage to the device from the voltage generator. With intermittent generation of heat in the device 1 by the voltage, the vibration tester gives the vibration with a specified frequency and vibration to the device 1. This causes the heat and the vibration fatigue at the mount part of the device 1 with the radiation fin 3 simultaneously. Thus, it is possible to test the reliability of the mount part by checking the deterioration of thermal resistance at the part due to the mutual action of these two factors.
COPYRIGHT: (C)1981,JPO&Japio
JP7987679A 1979-06-22 1979-06-22 Test of semiconductor device Pending JPS564069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7987679A JPS564069A (en) 1979-06-22 1979-06-22 Test of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7987679A JPS564069A (en) 1979-06-22 1979-06-22 Test of semiconductor device

Publications (1)

Publication Number Publication Date
JPS564069A true JPS564069A (en) 1981-01-16

Family

ID=13702421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7987679A Pending JPS564069A (en) 1979-06-22 1979-06-22 Test of semiconductor device

Country Status (1)

Country Link
JP (1) JPS564069A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170102257A (en) 2015-01-06 2017-09-08 에드워즈 리미티드 Vacuum exhaust system and channel-switching valve used in this vacuum exhaust system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170102257A (en) 2015-01-06 2017-09-08 에드워즈 리미티드 Vacuum exhaust system and channel-switching valve used in this vacuum exhaust system

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