JPS5640492B2 - - Google Patents

Info

Publication number
JPS5640492B2
JPS5640492B2 JP12388575A JP12388575A JPS5640492B2 JP S5640492 B2 JPS5640492 B2 JP S5640492B2 JP 12388575 A JP12388575 A JP 12388575A JP 12388575 A JP12388575 A JP 12388575A JP S5640492 B2 JPS5640492 B2 JP S5640492B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12388575A
Other languages
Japanese (ja)
Other versions
JPS5169369A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7435152A external-priority patent/FR2288138A1/fr
Priority claimed from FR7435151A external-priority patent/FR2288392A1/fr
Application filed filed Critical
Publication of JPS5169369A publication Critical patent/JPS5169369A/ja
Publication of JPS5640492B2 publication Critical patent/JPS5640492B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP12388575A 1974-10-18 1975-10-16 Expired JPS5640492B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7435152A FR2288138A1 (fr) 1974-10-18 1974-10-18 Procede d'attaque de l'alumine
FR7435151A FR2288392A1 (fr) 1974-10-18 1974-10-18 Procede de realisation de dispositifs semiconducteurs

Publications (2)

Publication Number Publication Date
JPS5169369A JPS5169369A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-06-15
JPS5640492B2 true JPS5640492B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-09-21

Family

ID=26218562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12388575A Expired JPS5640492B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-10-18 1975-10-16

Country Status (4)

Country Link
JP (1) JPS5640492B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BR (1) BR7506737A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2546316C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1526425A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3048083C2 (de) * 1980-12-19 1983-09-29 Ludwig 8900 Augsburg Fahrmbacher-Lutz Verfahren zur chemischen Entfernung von Oxidschichten von Gegenständen aus Titan oder Titanlegierungen
JPS59184532A (ja) * 1983-04-05 1984-10-19 Oki Electric Ind Co Ltd 半導体装置の製造方法
WO1999046811A1 (de) * 1998-03-10 1999-09-16 Scacco Electronics Consulting Selektives ätzen von siliciumnitrid mit einem nasschemischen ver fahren
JP7026704B2 (ja) * 2018-01-30 2022-02-28 東京エレクトロン株式会社 基板処理方法、基板処理装置およびエッチング液

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2828193A (en) * 1954-08-09 1958-03-25 Turco Products Inc Method for rejuvenation of aluminum treating solutions
JPS5141161B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-08-25 1976-11-08

Also Published As

Publication number Publication date
DE2546316C2 (de) 1982-11-11
DE2546316A1 (de) 1976-04-22
GB1526425A (en) 1978-09-27
JPS5169369A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-06-15
BR7506737A (pt) 1976-08-17

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