JPS5638843A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS5638843A
JPS5638843A JP11556579A JP11556579A JPS5638843A JP S5638843 A JPS5638843 A JP S5638843A JP 11556579 A JP11556579 A JP 11556579A JP 11556579 A JP11556579 A JP 11556579A JP S5638843 A JPS5638843 A JP S5638843A
Authority
JP
Japan
Prior art keywords
layer
silicon film
insulation
wiring
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11556579A
Other languages
Japanese (ja)
Inventor
Toshiaki Ogata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP11556579A priority Critical patent/JPS5638843A/en
Publication of JPS5638843A publication Critical patent/JPS5638843A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent a multi-layer wiring from a faulty insulation due to the generation of pinholes by a method wherein an inter-layer insulation film is made of two layer structure of an oxidated silicon film and a nitrided silicon film. CONSTITUTION:The inter-layer insulation film in the multi-layer wiring structure of the MOS type semiconductor device is made of the two layers structure that the nitrided silicon film 6 is formed on the oxidated silicon film 5. Since the etching liquid is different among the nitrided silicon film and the oxidated silicon film, even though there is a pin hole in the thin policrystalline silicon film 7, the inter-layer insulation film is not etched by a light etching or the like, the insulation of the first wiring layer and the second wiring layer can be maintained. Accordingly, since the faulty insulation is not produced, this constitution is effectively used for the highly integrated MOS type semiconductor device having the high melting point metal or the high melting point metal silicon compound gate 8, or an Al or an Al-Si wiring 9.
JP11556579A 1979-09-07 1979-09-07 Mos type semiconductor device Pending JPS5638843A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11556579A JPS5638843A (en) 1979-09-07 1979-09-07 Mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11556579A JPS5638843A (en) 1979-09-07 1979-09-07 Mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5638843A true JPS5638843A (en) 1981-04-14

Family

ID=14665689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11556579A Pending JPS5638843A (en) 1979-09-07 1979-09-07 Mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5638843A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5539244A (en) * 1993-03-12 1996-07-23 Hitachi, Ltd. Power semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5539244A (en) * 1993-03-12 1996-07-23 Hitachi, Ltd. Power semiconductor device

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