JPS5635529A - Pulse driving circuit - Google Patents

Pulse driving circuit

Info

Publication number
JPS5635529A
JPS5635529A JP11108579A JP11108579A JPS5635529A JP S5635529 A JPS5635529 A JP S5635529A JP 11108579 A JP11108579 A JP 11108579A JP 11108579 A JP11108579 A JP 11108579A JP S5635529 A JPS5635529 A JP S5635529A
Authority
JP
Japan
Prior art keywords
resistances
emitter
transistor
voltage
fluctuation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11108579A
Other languages
Japanese (ja)
Inventor
Shinichiro Taguchi
Nobuya Nagao
Yutaka Ogiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11108579A priority Critical patent/JPS5635529A/en
Publication of JPS5635529A publication Critical patent/JPS5635529A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature

Landscapes

  • Manipulation Of Pulses (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To ensure a steady operation of the bias power source to the fluctuation of both the voltage and the temperature, by fitting the value of the 1st-4th resistances each which are connected to the emitter, base and collector of the transistor to the prescribed equation. CONSTITUTION:The emitter of the transistor Q13 is connected to the reference potential terminal via the resistance R14. And the emitter of transistor Q12 is connected to the collector of the Q13 via the diodes LD1-LD3 and then the resistance R13 each in parallel. The resistances R11 and R12 are connected to the base of the Q13. Then the value of the resistances R11, R12, R13 and R14 each of the prescribed equation (where N1-N3 and M are a positive integer each) is selected so that the output DC level may be equal to mVF (forward voltage of diode). As a result, the DC output level can be stabilized enough although the voltage of the DC pulse power sources E1 and E2 may have a fluctuation.
JP11108579A 1979-08-31 1979-08-31 Pulse driving circuit Pending JPS5635529A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11108579A JPS5635529A (en) 1979-08-31 1979-08-31 Pulse driving circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11108579A JPS5635529A (en) 1979-08-31 1979-08-31 Pulse driving circuit

Publications (1)

Publication Number Publication Date
JPS5635529A true JPS5635529A (en) 1981-04-08

Family

ID=14551993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11108579A Pending JPS5635529A (en) 1979-08-31 1979-08-31 Pulse driving circuit

Country Status (1)

Country Link
JP (1) JPS5635529A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917913U (en) * 1982-07-27 1984-02-03 株式会社プラコ− Inflation film molding die equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917913U (en) * 1982-07-27 1984-02-03 株式会社プラコ− Inflation film molding die equipment

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