JPS5630767A - Nonvolatile semiconductor memory device - Google Patents
Nonvolatile semiconductor memory deviceInfo
- Publication number
- JPS5630767A JPS5630767A JP10552579A JP10552579A JPS5630767A JP S5630767 A JPS5630767 A JP S5630767A JP 10552579 A JP10552579 A JP 10552579A JP 10552579 A JP10552579 A JP 10552579A JP S5630767 A JPS5630767 A JP S5630767A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- wire
- memory cell
- electrically
- erasing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10552579A JPS5630767A (en) | 1979-08-21 | 1979-08-21 | Nonvolatile semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10552579A JPS5630767A (en) | 1979-08-21 | 1979-08-21 | Nonvolatile semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5630767A true JPS5630767A (en) | 1981-03-27 |
Family
ID=14409998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10552579A Pending JPS5630767A (en) | 1979-08-21 | 1979-08-21 | Nonvolatile semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5630767A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04310696A (ja) * | 1991-04-10 | 1992-11-02 | Nec Corp | 不揮発性半導体記憶装置の起動方法 |
JPH04310697A (ja) * | 1991-04-10 | 1992-11-02 | Nec Corp | 不揮発性半導体記憶装置の起動方法 |
US5233833A (en) * | 1992-10-28 | 1993-08-10 | Allied-Signal Inc. | Seal for mounting flange of a master cylinder |
-
1979
- 1979-08-21 JP JP10552579A patent/JPS5630767A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04310696A (ja) * | 1991-04-10 | 1992-11-02 | Nec Corp | 不揮発性半導体記憶装置の起動方法 |
JPH04310697A (ja) * | 1991-04-10 | 1992-11-02 | Nec Corp | 不揮発性半導体記憶装置の起動方法 |
US5233833A (en) * | 1992-10-28 | 1993-08-10 | Allied-Signal Inc. | Seal for mounting flange of a master cylinder |
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