JPS5629261B2 - - Google Patents

Info

Publication number
JPS5629261B2
JPS5629261B2 JP4658073A JP4658073A JPS5629261B2 JP S5629261 B2 JPS5629261 B2 JP S5629261B2 JP 4658073 A JP4658073 A JP 4658073A JP 4658073 A JP4658073 A JP 4658073A JP S5629261 B2 JPS5629261 B2 JP S5629261B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4658073A
Other languages
Japanese (ja)
Other versions
JPS4948403A (US06492441-20021210-C00072.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4948403A publication Critical patent/JPS4948403A/ja
Publication of JPS5629261B2 publication Critical patent/JPS5629261B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/016—Diazonium salts or compounds
    • G03F7/021—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
    • G03F7/0212—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the diazo resins or the polymeric diazonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0381—Macromolecular compounds which are rendered insoluble or differentially wettable using a combination of a phenolic resin and a polyoxyethylene resin

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Printing Plates And Materials Therefor (AREA)
JP4658073A 1972-05-05 1973-04-23 Expired JPS5629261B2 (US06492441-20021210-C00072.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2119172A GB1375461A (US06492441-20021210-C00072.png) 1972-05-05 1972-05-05

Publications (2)

Publication Number Publication Date
JPS4948403A JPS4948403A (US06492441-20021210-C00072.png) 1974-05-10
JPS5629261B2 true JPS5629261B2 (US06492441-20021210-C00072.png) 1981-07-07

Family

ID=10158714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4658073A Expired JPS5629261B2 (US06492441-20021210-C00072.png) 1972-05-05 1973-04-23

Country Status (8)

Country Link
US (1) US3869292A (US06492441-20021210-C00072.png)
JP (1) JPS5629261B2 (US06492441-20021210-C00072.png)
DE (1) DE2322230C2 (US06492441-20021210-C00072.png)
FR (1) FR2183748B1 (US06492441-20021210-C00072.png)
GB (1) GB1375461A (US06492441-20021210-C00072.png)
IT (1) IT985848B (US06492441-20021210-C00072.png)
NL (1) NL164140C (US06492441-20021210-C00072.png)
SE (1) SE403662B (US06492441-20021210-C00072.png)

Families Citing this family (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5236043B2 (US06492441-20021210-C00072.png) * 1974-02-21 1977-09-13
JPS5241050B2 (US06492441-20021210-C00072.png) * 1974-03-27 1977-10-15
JPS51120712A (en) * 1975-04-15 1976-10-22 Toshiba Corp Positive type photo-resistant compound
JPS522519A (en) * 1975-06-24 1977-01-10 Toshiba Corp Positive photosensitive composite material
US4009033A (en) * 1975-09-22 1977-02-22 International Business Machines Corporation High speed positive photoresist composition
JPS549619A (en) * 1977-06-23 1979-01-24 Oji Paper Co Photosensitive composition
US4259434A (en) * 1977-10-24 1981-03-31 Fuji Photo Film Co., Ltd. Method for developing positive acting light-sensitive planographic printing plate
JPS5498614A (en) * 1978-01-09 1979-08-03 Konishiroku Photo Ind Co Ltd Photosensitive composition
DE2855393A1 (de) * 1978-12-21 1980-07-03 Hoechst Ag Verfahren zum herstellen von flachdruckformen
GB2052084B (en) * 1979-06-13 1983-04-20 Fuji Photo Film Co Ltd Process for preparing photosensitive lithographic printing plate precursor
JPS5672991A (en) * 1979-11-19 1981-06-17 Mita Ind Co Ltd Color former for coloring substance of leucoline and recording material made by use thereof
JPS56162744A (en) * 1980-05-19 1981-12-14 Hitachi Ltd Formation of fine pattern
JPS5730829A (en) * 1980-08-01 1982-02-19 Hitachi Ltd Micropattern formation method
JPS5852638A (ja) * 1981-09-24 1983-03-28 Hitachi Ltd 放射線感応性組成物
JPS5872139A (ja) * 1981-10-26 1983-04-30 Tokyo Ohka Kogyo Co Ltd 感光性材料
US4554237A (en) * 1981-12-25 1985-11-19 Hitach, Ltd. Photosensitive resin composition and method for forming fine patterns with said composition
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
JPS58203433A (ja) * 1982-05-21 1983-11-26 Fuji Photo Film Co Ltd 感光性組成物
JPS58205147A (ja) * 1982-05-25 1983-11-30 Sumitomo Chem Co Ltd ポジ型フオトレジスト組成物
DE3415033C2 (de) * 1983-04-20 1986-04-03 Hitachi Chemical Co., Ltd. 4'-Azidobenzal-2-methoxyacetophenon, Verfahren zu seiner Herstellung und dieses enthaltende photoempfindliche Masse
DE3417607A1 (de) * 1983-05-12 1984-11-15 Hitachi Chemical Co., Ltd. Verfahren zur herstellung feiner muster
EP0135900A3 (en) * 1983-09-16 1986-06-11 Olin Hunt Specialty Products, Inc. Aqueous developable negative resist compositions
US4551409A (en) * 1983-11-07 1985-11-05 Shipley Company Inc. Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide
US4569897A (en) * 1984-01-16 1986-02-11 Rohm And Haas Company Negative photoresist compositions with polyglutarimide polymer
US4631249A (en) * 1984-01-16 1986-12-23 Rohm & Haas Company Process for forming thermally stable negative images on surfaces utilizing polyglutarimide polymer in photoresist composition
DE3406927A1 (de) * 1984-02-25 1985-08-29 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen
JPS60220931A (ja) * 1984-03-06 1985-11-05 Tokyo Ohka Kogyo Co Ltd 感光性樹脂用下地材料
DE3584316D1 (de) * 1984-06-01 1991-11-14 Rohm & Haas Lichtempfindliche beschichtungszusammensetzung, aus diesem hergestellte thermisch stabile beschichtungen und verfahren zur herstellung von thermisch stabilen polymerbildern.
DE3421448A1 (de) * 1984-06-08 1985-12-12 Hoechst Ag, 6230 Frankfurt Perfluoralkylgruppen aufweisende polymere, sie enthaltende reproduktionsschichten und deren verwendung fuer den wasserlosen offsetdruck
JPS6161154A (ja) * 1984-09-03 1986-03-28 Oki Electric Ind Co Ltd 微細ネガレジストパターン形成方法
DE3445276A1 (de) * 1984-12-12 1986-06-19 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch, daraus hergestelltes lichtempfindliches aufzeichnungsmaterial und verfahren zur herstellung einer flachdruckform
US4600683A (en) * 1985-04-22 1986-07-15 International Business Machines Corp. Cross-linked polyalkenyl phenol based photoresist compositions
JPH0766184B2 (ja) * 1985-06-04 1995-07-19 住友化学工業株式会社 ポジ型フオトレジスト組成物
US5215857A (en) * 1985-08-07 1993-06-01 Japan Synthetic Rubber Co., Ltd. 1,2-quinonediazide containing radiation-sensitive resin composition utilizing methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate or methyl 3-methoxypropionate as the solvent
US5238774A (en) * 1985-08-07 1993-08-24 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive composition containing 1,2-quinonediazide compound, alkali-soluble resin and monooxymonocarboxylic acid ester solvent
JPS62123444A (ja) 1985-08-07 1987-06-04 Japan Synthetic Rubber Co Ltd ポジ型感放射線性樹脂組成物
DE3662952D1 (en) * 1985-08-12 1989-05-24 Hoechst Celanese Corp Process for obtaining negative images from positive photoresists
US5256522A (en) * 1985-08-12 1993-10-26 Hoechst Celanese Corporation Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
US5217840A (en) * 1985-08-12 1993-06-08 Hoechst Celanese Corporation Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
US4931381A (en) * 1985-08-12 1990-06-05 Hoechst Celanese Corporation Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment
DE3528930A1 (de) * 1985-08-13 1987-02-26 Hoechst Ag Polymere verbindungen und diese enthaltendes strahlungsempfindliches gemisch
DE3528929A1 (de) * 1985-08-13 1987-02-26 Hoechst Ag Strahlungsempfindliches gemisch, dieses enthaltendes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefbildern
US4758497A (en) * 1985-08-22 1988-07-19 Polychrome Corporation Photosensitive naphthoquinone diazide sulfonyl ester compounds for the fabrication of lithographic plates and photosensitive sheet construction with the compounds
US4692398A (en) * 1985-10-28 1987-09-08 American Hoechst Corporation Process of using photoresist treating composition containing a mixture of a hexa-alkyl disilazane, propylene glycol alkyl ether and propylene glycol alkyl ether acetate
US5039594A (en) * 1985-10-28 1991-08-13 Hoechst Celanese Corporation Positive photoresist containing a mixture of propylene glycol alkyl ethers and propylene glycol alkyl ether acetate
US4983490A (en) * 1985-10-28 1991-01-08 Hoechst Celanese Corporation Photoresist treating composition consisting of a mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
US4806458A (en) * 1985-10-28 1989-02-21 Hoechst Celanese Corporation Composition containing a mixture of hexa-alkyl disilazane and propylene glycol alkyl ether and/or propylene glycol alkyl ether acetate
US4948697A (en) * 1985-10-28 1990-08-14 Hoechst Celanese Corporation Positive photoresist with a solvent mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
JPS62102241A (ja) * 1985-10-30 1987-05-12 Tokyo Ohka Kogyo Co Ltd 感光性組成物
EP0224680B1 (en) * 1985-12-05 1992-01-15 International Business Machines Corporation Diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
US4942108A (en) * 1985-12-05 1990-07-17 International Business Machines Corporation Process of making diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
US4980264A (en) * 1985-12-17 1990-12-25 International Business Machines Corporation Photoresist compositions of controlled dissolution rate in alkaline developers
US4822716A (en) * 1985-12-27 1989-04-18 Kabushiki Kaisha Toshiba Polysilanes, Polysiloxanes and silicone resist materials containing these compounds
US4720445A (en) * 1986-02-18 1988-01-19 Allied Corporation Copolymers from maleimide and aliphatic vinyl ethers and esters used in positive photoresist
JPS62227143A (ja) * 1986-03-28 1987-10-06 Toshiba Corp 感光性組成物
JPH07113773B2 (ja) * 1986-07-04 1995-12-06 株式会社日立製作所 パタ−ン形成方法
US5300380A (en) * 1986-08-06 1994-04-05 Ciba-Geigy Corporation Process for the production of relief structures using a negative photoresist based on polyphenols and epoxy compounds or vinyl ethers
DE3766315D1 (de) * 1986-08-06 1991-01-03 Ciba Geigy Ag Negativ-photoresist auf basis von polyphenolen und epoxidverbindungen oder vinylethern.
US4788127A (en) * 1986-11-17 1988-11-29 Eastman Kodak Company Photoresist composition comprising an interpolymer of a silicon-containing monomer and an hydroxystyrene
US5128230A (en) * 1986-12-23 1992-07-07 Shipley Company Inc. Quinone diazide containing photoresist composition utilizing mixed solvent of ethyl lactate, anisole and amyl acetate
JPH07117747B2 (ja) * 1987-04-21 1995-12-18 富士写真フイルム株式会社 感光性組成物
JPS63265242A (ja) * 1987-04-23 1988-11-01 Fuji Photo Film Co Ltd 多色画像形成方法
JPS6435436A (en) * 1987-07-30 1989-02-06 Mitsubishi Chem Ind Photosensitive planographic printing plate
DE3729035A1 (de) * 1987-08-31 1989-03-09 Hoechst Ag Positiv arbeitendes lichtempfindliches gemisch und daraus hergestelltes photolithographisches aufzeichnungsmaterial
US4927956A (en) * 1987-09-16 1990-05-22 Hoechst Celanese Corporation 3,5-disubstituted-4-acetoxystyrene and process for its production
JP2693472B2 (ja) * 1987-11-26 1997-12-24 株式会社東芝 レジスト
DE3800617A1 (de) * 1988-01-12 1989-07-20 Hoechst Ag Elektrophotographisches aufzeichnungsmaterial
US4824758A (en) * 1988-01-25 1989-04-25 Hoechst Celanese Corp Photoresist compositions based on acetoxystyrene copolymers
DE3812326A1 (de) * 1988-04-14 1989-10-26 Basf Ag Positiv arbeitendes, strahlungsempfindliches gemisch auf basis von saeurespaltbaren und photochemisch saeurebildenden verbindungen und verfahren zur herstellung von reliefmustern und reliefbildern
DE3820699A1 (de) * 1988-06-18 1989-12-21 Hoechst Ag Strahlungsempfindliches gemisch und hieraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
US5342727A (en) * 1988-10-21 1994-08-30 Hoechst Celanese Corp. Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in admixture with a photosensitizer to form a photosensitive composition
DE3837500A1 (de) * 1988-11-04 1990-05-23 Hoechst Ag Neue, strahlungsempfindliche verbindungen, hiermit hergestelltes strahlungsempfindliches gemisch und aufzeichnungsmaterial
DE3837499A1 (de) * 1988-11-04 1990-05-23 Hoechst Ag Verfahren zur herstellung von substituierten 1,2-naphthochinon-(2)-diazid-4-sulfonsaeureestern und deren verwendung in einem strahlungsempfindlichen gemisch
US5128232A (en) * 1989-05-22 1992-07-07 Shiply Company Inc. Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
DE3940911A1 (de) * 1989-12-12 1991-06-13 Hoechst Ag Verfahren zur herstellung negativer kopien
DE4002397A1 (de) * 1990-01-27 1991-08-01 Hoechst Ag Strahlungsempfindliches gemisch und hieraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE4003025A1 (de) * 1990-02-02 1991-08-08 Hoechst Ag Strahlungsempfindliches gemisch, hiermit hergestelltes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefaufzeichnungen
DE4004719A1 (de) * 1990-02-15 1991-08-22 Hoechst Ag Strahlungsempfindliches gemisch, hiermit hergestelltes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefaufzeichnungen
US5210137A (en) * 1990-11-19 1993-05-11 Shell Oil Company Polyketone polymer blends
EP0501919A1 (de) * 1991-03-01 1992-09-02 Ciba-Geigy Ag Strahlungsempfindliche Zusammensetzungen auf der Basis von Polyphenolen und Acetalen
US5200460A (en) * 1991-04-30 1993-04-06 Shell Oil Company Polyacetal polymer blends
US5340687A (en) * 1992-05-06 1994-08-23 Ocg Microelectronic Materials, Inc. Chemically modified hydroxy styrene polymer resins and their use in photoactive resist compositions wherein the modifying agent is monomethylol phenol
US5550004A (en) * 1992-05-06 1996-08-27 Ocg Microelectronic Materials, Inc. Chemically amplified radiation-sensitive composition
KR950004908B1 (ko) * 1992-09-09 1995-05-15 삼성전자주식회사 포토 레지스트 조성물 및 이를 이용한 패턴형성방법
DE19507618A1 (de) * 1995-03-04 1996-09-05 Hoechst Ag Polymere und diese enthaltendes lichtempfindliches Gemisch
US5853947A (en) * 1995-12-21 1998-12-29 Clariant Finance (Bvi) Limited Quinonediazide positive photoresist utilizing mixed solvent consisting essentially of 3-methyl-3-methoxy butanol and propylene glycol alkyl ether acetate
US5719004A (en) * 1996-08-07 1998-02-17 Clariant Finance (Bvi) Limited Positive photoresist composition containing a 2,4-dinitro-1-naphthol
US5763135A (en) * 1996-09-30 1998-06-09 Clariant Finance (Bvi) Limited Light sensitive composition containing an arylhydrazo dye
US6103443A (en) * 1997-11-21 2000-08-15 Clariant Finance Lmited Photoresist composition containing a novel polymer
DE19803564A1 (de) 1998-01-30 1999-08-05 Agfa Gevaert Ag Polymere mit Einheiten aus N-substituiertem Maleimid und deren Verwendung in strahlungsempfindlichen Gemischen
US6783914B1 (en) 2000-02-25 2004-08-31 Massachusetts Institute Of Technology Encapsulated inorganic resists
US6936398B2 (en) * 2001-05-09 2005-08-30 Massachusetts Institute Of Technology Resist with reduced line edge roughness
JP2014510626A (ja) 2011-03-10 2014-05-01 スリーエム イノベイティブ プロパティズ カンパニー 濾材
US8703385B2 (en) 2012-02-10 2014-04-22 3M Innovative Properties Company Photoresist composition
US8715904B2 (en) 2012-04-27 2014-05-06 3M Innovative Properties Company Photocurable composition
US8883402B2 (en) 2012-08-09 2014-11-11 3M Innovative Properties Company Photocurable compositions
CN104737075A (zh) 2012-08-09 2015-06-24 3M创新有限公司 可光致固化的组合物

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US3230087A (en) * 1959-02-26 1966-01-18 Azoplate Corp Light-sensitive polymeric diazonium and azidoacrylamido reproduction materials and process for making plates therefrom
BE606888A (US06492441-20021210-C00072.png) * 1960-08-05 1900-01-01
US3615532A (en) * 1963-12-09 1971-10-26 Union Carbide Corp Printing plate compositions
US3396020A (en) * 1965-11-16 1968-08-06 Azoplate Corp Planographic printing plate
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US3625919A (en) * 1967-02-10 1971-12-07 Hiroyoshi Kamogawa Process for the preparation of diazotized vinylphenol polymers having phototropic properties
US3589898A (en) * 1968-10-08 1971-06-29 Polychrome Corp Litho plate
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US3778270A (en) * 1970-11-12 1973-12-11 Du Pont Photosensitive bis-diazonium salt compositions and elements

Also Published As

Publication number Publication date
JPS4948403A (US06492441-20021210-C00072.png) 1974-05-10
SE403662B (sv) 1978-08-28
NL164140C (nl) 1980-11-17
US3869292A (en) 1975-03-04
NL7305260A (US06492441-20021210-C00072.png) 1973-11-07
FR2183748B1 (US06492441-20021210-C00072.png) 1977-02-11
DE2322230A1 (de) 1973-11-22
GB1375461A (US06492441-20021210-C00072.png) 1974-11-27
NL164140B (nl) 1980-06-16
FR2183748A1 (US06492441-20021210-C00072.png) 1973-12-21
IT985848B (it) 1974-12-20
DE2322230C2 (de) 1984-01-12

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